Datasheet > IRFP440A

IRFP440A

更新时间： 2024-11-23 23:58:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
7页	226K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 8.5A I(D) \| TO-247VAR

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数据手册

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IRFP440A 数据手册

IRFP440A

FEATURES

BV_DSS= 500 V

R_DS(on)= 0.85Ω

I_D= 8.5 A

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

♦

Improved Gate Charge

Extended Safe Operating Area

TO-3P

Lower Leakage Current: 10 A (Max.) @ V_DS= 500V

Lower R_DS(ON): 0.638 (Typ.)

Ω

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Value

500

8.5

Units

V_DSS

Drain-to-Source Voltage

Continuous Drain Current (T_C=25°C)

Continuous Drain Current (T_C=100°C)

Drain Current-Pulsed

I_D

5.4

I_DM

V_GS

E_AS

I_AR

(1)

Gate-to-Source Voltage

(2)

(1)

(3)

Single Pulsed Avalanche Energy

Avalanche Current

602

8.5

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation (T_C=25°C)

Linear Derating Factor

V/ns

16.2

3.5

162

1.3

P_D

T_J, T_STG

T_L

W/°C

Operating Junction and

- 55 to +150

300

Storage Temperature Range

Maximum Lead Temp. for Soldering

°C

Purposes, 1/8 from case for 5-seconds

Thermal Resistance

Symbol

R_θJC

Characteristic

Junction-to-Case

Case-to-Sink

Typ.

Max.

Units

0.24

0.77

R_θCS

°C/W

R_θJA

Junction-to-Ambient

Rev. B

12 3 4 5 6 7

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