型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFP443 | SAMSUNG |
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Power Field-Effect Transistor, 7A I(D), 450V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal | |
IRFP443R | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 7.7A I(D) | TO-247 | |
IRFP4468 | INFINEON |
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The StrongIRFET™ power MOSFET family is optim | |
IRFP4468 | ISC |
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N-Channel MOSFET Transistor | |
IRFP4468PBF | INFINEON |
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HEXFET Power MOSFET | |
IRFP448 | VISHAY |
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Power MOSFET | |
IRFP448 | INFINEON |
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HEXFET POWER MOSFET | |
IRFP448PBF | VISHAY |
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Power MOSFET | |
IRFP449 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 9.7A I(D) | TO-247AC | |
IRFP450 | STMICROELECTRONICS |
获取价格 |
N - CHANNEL 500V - 0.33ohm - 14A - TO-247 PowerMESH] MOSFET |