Datasheet > IRFP4468

IRFP4468

更新时间： 2024-11-28 11:11:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	305K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

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IRFP4468 数据手册

PD -97134

IRFP4468PbF

HEXFET^®Power MOSFET

Applications

V_DSS

R_DS(on)typ.

100V

l High Efficiency Synchronous Rectification in SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

2.0m

2.6m

max.

I_D

290A

(Silicon Limited)

195A

(Package Limited)

Benefits

l Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

l Fully Characterized Capacitance and Avalanche

SOA

l Enhanced body diode dV/dt and dI/dt Capability

l Lead-Free

TO-247AC

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Parameter

Max.

290c

200

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current d

195

1120

520

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

3.4

W/°C

V_GS

± 20

Gate-to-Source Voltage

Peak Diode Recovery f

dv/dt

T_J

V/ns

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

°C

300

10lbxin (1.1Nxm)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy e

E_{AS (Thermally limited)}

740

Avalanche Currentꢀd

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy g

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

0.29

–––

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case k

Case-to-Sink, Flat Greased Surface

0.24

–––

°C/W

Junction-to-Ambient jk

www.irf.com

5/21/08

12 3 4 5 6 7...9

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