Datasheet > IRFP450

IRFP450

更新时间： 2024-11-26 22:51:39

品牌	Logo	应用领域
英特矽尔 - INTERSIL		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
7页	59K
描述
14A, 500V, 0.400 Ohm, N-Channel Power MOSFET

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IRFP450 数据手册

IRFP450

Data Sheet

July 1999

File Number 2331.3

14A, 500V, 0.400 Ohm, N-Channel

Power MOSFET

Features

• 14A, 500V

This N-Channel enhancement mode silicon gate power ﬁeld

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a speciﬁed level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching convertors, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

• r

= 0.400Ω

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA17435.

Ordering Information

Symbol

PART NUMBER

PACKAGE

BRAND

IRFP450

TO-247

NOTE: When ordering, use the entire part number.

Packaging

JEDEC STYLE TO-247

SOURCE

DRAIN

GATE

DRAIN

(TAB)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

4-353

12 3 4 5 6 7

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IRFP450 替代型号

型号	品牌	替代类型	描述	数据表
IRFP450PBF	VISHAY	功能相似	Power MOSFET
FAP-450	FUJI	功能相似	N-channel MOS-FET(500V, 0,38ヘ, 14A, 190W)
STW15NB50	STMICROELECTRONICS	功能相似	N-CHANNEL 500V - 0.33ohm - 14.6A - T0-247/ISOWATT218 PowerMESH MOSFET

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