Datasheet > IRFP440PBF

IRFP440PBF

更新时间： 2024-02-11 05:45:47

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	1447K
描述
Power MOSFET

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技术参数
数据手册

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IRFP440PBF 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.87	配置：	Single
最大漏极电流 (Abs) (ID)：	8.8 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e0	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	150 W	子类别：	FET General Purpose Power
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

IRFP440PBF 数据手册

IRFP440, SiHFP440

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

500

Available

• Repetitive Avalanche Rated

• Isolated Central Mounting Hole

• Fast Switching

R_DS(on)(Ω)

V_GS= 10 V

0.85

RoHS*

Q_g(Max.) (nC)

COMPLIANT

_gs(nC)

_gd(nC)

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

Configuration

Single

DESCRIPTION

TO-247

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-247 package is preferred for commercial-industrial

applications where higher power levels preclude the use of

TO-220 devices. The TO-247 is similar but superior to the

earlier TO-218 package because of its isolated mounting

hole. It also provides greater creepage distances between

pins to meet the requirements of most safety specifications.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-247

IRFP440PbF

SiHFP440-E3

IRFP440

Lead (Pb)-free

SnPb

SiHFP440

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

500

V_GS

T_C= 25 °C

T_C=100°C

8.8

Continuous Drain Current

V_GSat 10 V

I_D

5.6

Pulsed Drain Current^a

I_DM

Linear Derating Factor

1.2

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

480

8.8

E_AR

Maximum Power Dissipation

Peak Diode Recovery dV/dt^c

_C= 25 °C

P_D

150

3.5

dV/dt

T_J, T_stg

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 11 mH, R_G= 25 Ω, I_AS= 8.8 A (see fig. 12).

c. I_SD≤ 8.8 A, dI/dt ≤ 100 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91228

S-81360-Rev. A, 28-Jul-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

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与IRFP440PBF相关器件

型号	品牌	获取价格	描述	数据表
IRFP440R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 8.8A I(D) \| TO-247
IRFP441	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 450V V(BR)DSS \| 8.1A I(D) \| TO-247AC
IRFP4410ZPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFP441R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 450V V(BR)DSS \| 8.8A I(D) \| TO-247
IRFP442	SAMSUNG	获取价格	Power Field-Effect Transistor, 7A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal
IRFP442R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 7.7A I(D) \| TO-247
IRFP443	SAMSUNG	获取价格	Power Field-Effect Transistor, 7A I(D), 450V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal
IRFP443R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 450V V(BR)DSS \| 7.7A I(D) \| TO-247
IRFP4468	INFINEON	获取价格	The StrongIRFET™ power MOSFET family is optim
IRFP4468	ISC	获取价格	N-Channel MOSFET Transistor

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