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IRFP4410ZPBF PDF预览

IRFP4410ZPBF

更新时间: 2024-02-18 03:31:11
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 283K
描述
HEXFET Power MOSFET

IRFP4410ZPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-247AC
包装说明:TO-247AC, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:4.44Is Samacsys:N
雪崩能效等级(Eas):242 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):97 A最大漏极电流 (ID):97 A
最大漏源导通电阻:0.009 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247ACJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):250极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):230 W最大脉冲漏极电流 (IDM):390 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFP4410ZPBF 数据手册

 浏览型号IRFP4410ZPBF的Datasheet PDF文件第2页浏览型号IRFP4410ZPBF的Datasheet PDF文件第3页浏览型号IRFP4410ZPBF的Datasheet PDF文件第4页浏览型号IRFP4410ZPBF的Datasheet PDF文件第5页浏览型号IRFP4410ZPBF的Datasheet PDF文件第6页浏览型号IRFP4410ZPBF的Datasheet PDF文件第7页 
PD - 97309A  
IRFP4410ZPbF  
HEXFET® Power MOSFET  
Applications  
VDSS  
RDS(on) typ.  
max.  
100V  
l High Efficiency Synchronous Rectification in SMPS  
l Uninterruptible Power Supply  
l High Speed Power Switching  
l Hard Switched and High Frequency Circuits  
7.2m  
9.0m  
:
:
ID (Silicon Limited)  
97A  
Benefits  
l Improved Gate, Avalanche and Dynamic dV/dt  
D
D
Ruggedness  
l Fully Characterized Capacitance and Avalanche  
SOA  
S
D
l Enhanced body diode dV/dt and dI/dt Capability  
l Lead-Free  
G
G
TO-247AC  
S
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Symbol  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Parameter  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Pulsed Drain Current  
Max.  
Units  
97  
69  
A
390  
230  
1.5  
PD @TC = 25°C  
W
Maximum Power Dissipation  
Linear Derating Factor  
W/°C  
V
VGS  
Gate-to-Source Voltage  
20  
16  
Peak Diode Recovery  
dv/dt  
TJ  
V/ns  
°C  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
300  
Mounting torque, 6-32 or M3 screw  
10lb in (1.1N m)  
Avalanche Characteristics  
Single Pulse Avalanche Energy  
EAS (Thermally limited)  
242  
mJ  
A
Avalanche Current  
IAR  
See Fig. 14, 15, 22a, 22b,  
Repetitive Avalanche Energy  
EAR  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–  
Max.  
0.65  
–––  
Units  
Rπ  
Junction-to-Case  
JC  
Rπ  
0.24  
°C/W  
Case-to-Sink, Flat Greased Surface  
Junction-to-Ambient  
CS  
RπJA  
–  
40  
www.irf.com  
1
03/07/08  

IRFP4410ZPBF 替代型号

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