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IRFP440 PDF预览

IRFP440

更新时间: 2024-11-23 22:51:39
品牌 Logo 应用领域
英特矽尔 - INTERSIL /
页数 文件大小 规格书
7页 60K
描述
8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET

IRFP440 数据手册

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IRFP440  
Data Sheet  
July 1999  
File Number 2089.3  
8.8A, 500V, 0.850 Ohm, N-Channel Power  
MOSFET  
Features  
• 8.8A, 500V  
This N-Channel enhancement mode silicon gate power field  
effect transistor is an advanced power MOSFET designed,  
tested, and guaranteed to withstand a specified level of  
energy in the breakdown avalanche mode of operation. All of  
these power MOSFETs are designed for applications such  
as switching regulators, switching convertors, motor drivers,  
relay drivers, and drivers for high power bipolar switching  
transistors requiring high speed and low gate drive power.  
These types can be operated directly from integrated  
circuits.  
• r  
= 0.850  
DS(ON)  
• Single Pulse Avalanche Energy Rated  
• SOA is Power Dissipation Limited  
• Nanosecond Switching Speeds  
• Linear Transfer Characteristics  
• High Input Impedance  
• Related Literature  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Formerly developmental type TA17425.  
Ordering Information  
Symbol  
PART NUMBER  
PACKAGE  
BRAND  
IRFP440  
D
IRFP440  
TO-247  
NOTE: When ordering, include the entire part number.  
G
S
Packaging  
JEDEC STYLE TO-247  
SOURCE  
DRAIN  
GATE  
DRAIN  
(FLANGE)  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
4-347  

IRFP440 替代型号

型号 品牌 替代类型 描述 数据表
IRFP440PBF VISHAY

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Power MOSFET
IRFP440 VISHAY

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与IRFP440相关器件

型号 品牌 获取价格 描述 数据表
IRFP440A ETC

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TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8.5A I(D) | TO-247VAR
IRFP440B FAIRCHILD

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IRFP440PBF VISHAY

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Power MOSFET
IRFP440PBF INFINEON

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HEXFET Power MOSFET
IRFP440R ETC

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TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8.8A I(D) | TO-247
IRFP441 ETC

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TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 8.1A I(D) | TO-247AC
IRFP4410ZPBF INFINEON

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HEXFET Power MOSFET
IRFP441R ETC

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TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 8.8A I(D) | TO-247
IRFP442 SAMSUNG

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Power Field-Effect Transistor, 7A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal
IRFP442R ETC

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TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 7.7A I(D) | TO-247