Datasheet > IRFP440

IRFP440

更新时间： 2024-02-25 13:38:43

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
7页	60K
描述
8.8A, 500V, 0.850 Ohm, N-Channel Power MOSFET

阅读下载

中文翻译

获取价格

技术参数
数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IRFP440 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.87	配置：	Single
最大漏极电流 (Abs) (ID)：	8.8 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e0	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	150 W	子类别：	FET General Purpose Power
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
Base Number Matches：	1

IRFP440 数据手册

IRFP440

Data Sheet

July 1999

File Number 2089.3

8.8A, 500V, 0.850 Ohm, N-Channel Power

MOSFET

Features

• 8.8A, 500V

This N-Channel enhancement mode silicon gate power ﬁeld

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a speciﬁed level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching convertors, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

• r

= 0.850Ω

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA17425.

Ordering Information

Symbol

PART NUMBER

PACKAGE

BRAND

IRFP440

TO-247

NOTE: When ordering, include the entire part number.

Packaging

JEDEC STYLE TO-247

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

4-347

12 3 4 5 6 7

中文翻译

下载PDF

IRFP440 替代型号

型号	品牌	替代类型	描述	数据表
IRFP440PBF	VISHAY	功能相似	Power MOSFET
IRFP440	VISHAY	功能相似	Power MOSFET

与IRFP440相关器件

型号	品牌	获取价格	描述	数据表
IRFP440A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 8.5A I(D) \| TO-247VAR
IRFP440B	FAIRCHILD	获取价格	500V N-Channel MOSFET
IRFP440PBF	VISHAY	获取价格	Power MOSFET
IRFP440PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFP440R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 8.8A I(D) \| TO-247
IRFP441	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 450V V(BR)DSS \| 8.1A I(D) \| TO-247AC
IRFP4410ZPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFP441R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 450V V(BR)DSS \| 8.8A I(D) \| TO-247
IRFP442	SAMSUNG	获取价格	Power Field-Effect Transistor, 7A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal
IRFP442R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 7.7A I(D) \| TO-247