Datasheet > IRFN054SCV

IRFN054SCV

更新时间： 2023-12-06 20:12:22

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	1638K
描述
60V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - Screening Level TXV

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFN054SCV 数据手册

IRFN054

Power MOSFET Surface Mount (SMD-1)

Device Characteristics

2.1

Electrical Characteristics (Pre-Irradiation)

Table 3

Symbol

Static and Dynamic Electrical Characteristics @ T_j= 25°C (Unless Otherwise Specified)

Parameter

Min. Typ. Max. Unit Test Conditions

Drain-to-Source Breakdown

Voltage

BV_DSS

—

0.68

—

V_GS= 0V, I_D= 1.0mA

Breakdown Voltage Temp.

Coefficient

BV_DSS/T_J

R_DS(on)

V/°C Reference to 25°C, I_D= 1.0mA

Static Drain-to-Source On-State

Resistance

0.020

V_GS= 10V, I_D2= 40A ¹



—

2.0

—

0.031

4.0

—

V_GS= 10V, I_D2= 55A ¹

V_GS(th)

Gfs

Gate Threshold Voltage

V_DS= V_GS, I_D= 250A

V_DS= 15V, I_D2= 40A ¹

V_DS= 48V, V_GS= 0V

V_DS= 48V,V_GS= 0V,T_J= 125°C

V_GS= 20V

Forward Transconductance

I_DSS

I_GSS

Zero Gate Voltage Drain Current

A

250

100

-100

160

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

V_GS= -20V

Q_G

I_D1= 55A

Q_GS

Q_GD

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

nC V_DS= 30V

V_GS= 10V

I_D1= 55A **

V_DD= 30V

R_G= 2.35

V_GS= 10V

180

100

t_d(off)

t_f

Turn-Off Delay Time

Fall Time

Measured from the center of drain

pad to center of source pad.

L_s+L_D

Total Inductance

—

4.0

—

C_iss

C_oss

C_rss

Input Capacitance

—

4265

1746

493

—

V_GS= 0V

pF V_DS= 25V

Output Capacitance

ƒ = 1.0MHz

Reverse Transfer Capacitance

** Switching speed maximum limits are based on manufacturing test equipment and capability.

¹Pulse width  300 µs; Duty Cycle  2%

4 of 12

2021-12-07

1 2 345 6 7...12

下载PDF

与IRFN054SCV相关器件

型号	品牌	描述	获取价格	数据表
IRFN054SCX	INFINEON	60V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - Screening Level TX	获取价格
IRFN054SMD	SEME-LAB	N-CHANNEL POWER MOSFET	获取价格
IRFN130SMD	SEME-LAB	N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS	获取价格
IRFN130SMD05	SEME-LAB	N–CHANNEL POWER MOSFET	获取价格
IRFN140	INFINEON	POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.077ohm, Id=28A)	获取价格
IRFN140PBF	INFINEON	暂无描述	获取价格