是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-MSFM-P3 | Reach Compliance Code: | compliant |
风险等级: | 5.83 | 雪崩能效等级(Eas): | 860 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 1000 V | 最大漏极电流 (ID): | 5.6 A |
最大漏源导通电阻: | 2.25 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-254AA | JESD-30 代码: | R-MSFM-P3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | METAL | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 22 A |
表面贴装: | NO | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFMJ044 | INFINEON |
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IRFML8244 | INFINEON |
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The StrongIRFET™ power MOSFET family is optim | |
IRFML8244PBF | INFINEON |
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Load/ System Switch | |
IRFML8244TR | UMW |
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种类:N-Channel;漏源电压(Vdss):25V;持续漏极电流(Id)(在25°C时 | |
IRFML8244TRPbF | INFINEON |
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Load/ System Switch | |
IRFML8244TRPBF | TYSEMI |
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IRFN044 | INFINEON |
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POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.040ohm, Id=44A) | |
IRFN044SMD | SEME-LAB |
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IRFN054 | INFINEON |
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POWER MOSFET N-CHANNEL(BVdss=60V, Rds(on)=0.020ohm, Id=55A*) | |
IRFN054SCV | INFINEON |
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60V Single N-Channel Hi-Rel MOSFET in a SMD-1 package - Screening Level TXV |