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IRFMG50UPBF PDF预览

IRFMG50UPBF

更新时间: 2024-11-05 13:08:47
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英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
7页 140K
描述
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IRFMG50UPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-MSFM-P3Reach Compliance Code:compliant
风险等级:5.83雪崩能效等级(Eas):860 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:1000 V最大漏极电流 (ID):5.6 A
最大漏源导通电阻:2.25 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-254AAJESD-30 代码:R-MSFM-P3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:METAL封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):22 A
表面贴装:NO端子形式:PIN/PEG
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON

IRFMG50UPBF 数据手册

 浏览型号IRFMG50UPBF的Datasheet PDF文件第2页浏览型号IRFMG50UPBF的Datasheet PDF文件第3页浏览型号IRFMG50UPBF的Datasheet PDF文件第4页浏览型号IRFMG50UPBF的Datasheet PDF文件第5页浏览型号IRFMG50UPBF的Datasheet PDF文件第6页浏览型号IRFMG50UPBF的Datasheet PDF文件第7页 
PD - 90711B  
IRFMG50  
1000V, N-CHANNEL  
POWER MOSFET  
THRU-HOLE (TO-254AA)  
HEXFET® MOSFET TECHNOLOGY  
Product Summary  
Part Number RDS(on)  
IRFMG50 2.0Ω  
ID  
5.6A  
HEXFET® MOSFET technology is the key to International  
Rectifier’s advanced line of power MOSFET transistors. The  
efficient geometry design achieves very low on-state re-  
sistance combined with high transconductance. HEXFET  
transistors also feature all of the well-established advan-  
tages of MOSFETs, such as voltage control, very fast switch-  
ing, ease of paralleling and electrical parameter temperature  
stability. They are well-suited for applications such as switch-  
ing power supplies, motor controls, inverters, choppers,  
audio amplifiers, high energy pulse circuits, and virtually  
any application where high reliability is required. The  
HEXFET transistor’s totally isolated package eliminates the  
need for additional isolating material between the device  
and the heatsink. This improves thermal efficiency and  
reduces drain capacitance.  
TO-254AA  
Features:  
n
n
n
n
n
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Electrically Isolated  
Ceramic Eyelets  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 10V, T = 25°C Continuous Drain Current  
5.6  
3.5  
D
GS  
C
A
I
= 10V, T = 100°C Continuous Drain Current  
C
D
GS  
I
Pulsed Drain Current  
Max. Power Dissipation  
Linear Derating Factor  
22  
DM  
@ T = 25°C  
P
D
150  
W
W/°C  
V
C
1.2  
V
Gate-to-Source Voltage  
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
860  
mJ  
A
AS  
I
5.6  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
15  
mJ  
V/ns  
AR  
dv/dt  
1.0  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Lead Temperature  
Weight  
300(0.063in./1.6mm from case for 10 sec)  
9.3 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
4/17/01  

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