Datasheet > IRFML8244

IRFML8244

更新时间： 2024-11-21 11:14:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	202K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

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中文翻译

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数据手册

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IRFML8244 数据手册

PD - 97587A

IRFML8244TRPbF

HEXFET^®Power MOSFET

V_DS

V_{GS Max}

± 20

R_{DS(on) max}

(@V_GS= 10V)



R_{DS(on) max}

(@V_GS= 4.5V)



Micro3 (SOT-23)

IRFML8244TRPbF

Application(s)

Load/ System Switch

Features and Benefits

Features

Benefits

Low R_DS(on)(  24m)

Lower switching losses

Industry-standard pinout

Multi-vendor compatibility

Compatible with existing Surface Mount Techniques

RoHS compliant containing no lead, no bromide and no halogen

MSL1, Consumer qualification

results in Easier manufacturing

Environmentally friendly

Increased reliability



Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

V_DS

Drain-Source Voltage

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

5.8

4.6

P_D@T_A= 25°C

P_D@T_A= 70°C

1.25

0.80

0.01

± 20

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

Gate-to-Source Voltage

T_J,T_STG

-55 to + 150

Junction and Storage Temperature Range

°C

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

100

Units

R_JA

Junction-to-Ambient

°C/W

R_JA

–––

Junction-to-Ambient (t<10s)

ORDERING INFORMATION:

See detailed ordering and shipping information on the last page of this data sheet.

Notes through are on page 10

www.irf.com

02/29/12

12 3 4 5 6 7...11

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