IRFMJ044

更新时间： 2024-11-20 04:23:23

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
7页	240K
描述
POWER MOSFET SURFACE MOUNT (D3 PAK)

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中文翻译

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数据手册

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IRFMJ044 数据手册

PD-97258

IRFMJ044

POWER MOSFET

SURFACE MOUNT (D3 PAK)

60V, N-CHANNEL

HEXFET^®MOSFET TECHNOLOGY

Product Summary

Part Number

RDS(on)

IRFMJ044

0.04 Ω

35A*

HEXFET^®MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry design achieves very low on-state

resistance combined with high transconductance.

HEXFET transistors also feature all of the well-established

advantages of MOSFETs, such as voltage control, very

fast switching, ease of paralleling and electrical

parameter temperature stability. They are well-suited for

applications such as switching power supplies, motor

controls, inverters, choppers, audio amplifiers, high

energy pulse circuits, and virtually any application where

high reliability is required. The HEXFET transistor’s totally

isolated package eliminates the need for additional

isolating material between the device and the heatsink.

This improves thermal efficiency and reduces drain

capacitance.

D3 PAK

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Dynamic dv/dt Rating

Light-weight

Screened to JANTX Level per

MIL-PRF-19500

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C

Continuous Drain Current

35*

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

140

@ T = 25°C

125

W/°C

1.0

±20

340

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

12.5

4.5

V/ns

dv/dt

-55 to 150

^oC

Storage Temperature Range

Weight

STG

9.3 (Typical)

*Current is limited by package

For footnotes refer to the last page

www.irf.com

09/13/06

12 3 4 5 6 7

中文翻译

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