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IRFML8244TRPBF PDF预览

IRFML8244TRPBF

更新时间: 2024-11-20 12:30:55
品牌 Logo 应用领域
TYSEMI /
页数 文件大小 规格书
2页 389K
描述
HEXFETpower MOSFET Multi-vendor compatibility Easier manufacturing Easier manufacturing

IRFML8244TRPBF 数据手册

 浏览型号IRFML8244TRPBF的Datasheet PDF文件第2页 
Product specification  
IRFML8244TRPbF  
HEXFET® Power MOSFET  
VDS  
25  
V
V
VGS Max  
± 20  
RDS(on) max  
(@VGS = 10V)  
24  
41  
m
RDS(on) max  
(@VGS = 4.5V)  
TM  
m
Micro3 (SOT-23)  
IRFML8244TRPbF  
Application(s)  
Load/ System Switch  
Features and Benefits  
Features  
Benefits  
Low RDS(on) ( 24m)  
Lower switching losses  
Industry-standard pinout  
Multi-vendor compatibility  
Compatible with existing Surface Mount Techniques  
RoHS compliant containing no lead, no bromide and no halogen  
MSL1, Consumer qualification  
results in Easier manufacturing  
Environmentally friendly  
Increased reliability  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
25  
Units  
V
VDS  
Drain-Source Voltage  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
5.8  
4.6  
A
24  
PD @TA = 25°C  
PD @TA = 70°C  
1.25  
0.80  
0.01  
± 20  
Maximum Power Dissipation  
Maximum Power Dissipation  
Linear Derating Factor  
W
W/°C  
V
VGS  
Gate-to-Source Voltage  
TJ, TSTG  
-55 to + 150  
Junction and Storage Temperature Range  
°C  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
100  
Units  
RJA  
Junction-to-Ambient  
°C/W  
RJA  
–––  
99  
Junction-to-Ambient (t<10s)  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 2  

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