Datasheet > IRFH5215PBF_15

IRFH5215PBF_15

更新时间： 2024-10-15 01:15:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	241K
描述
Primary Side Synchronous Rectification

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中文翻译

获取价格

数据手册

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IRFH5215PBF_15 数据手册

IRFH5215PbF

HEXFET^®Power MOSFET

V_DS

150

R_{DS(on) max}

(@V_GS= 10V)

Q_{g (typical)}

R_{G (typical)}

2.3

I_D

PQFN 5X6 mm

(@T_c(Bottom)= 25°C)

Applications

• Primary Side Synchronous Rectification

• Inverters for DC Motors

• DC-DC Brick Applications

• BoostConverters

Features and Benefits

Features

Benefits

Low RDSon (< 58 mΩ)

Low Thermal Resistance to PCB (<1.2°C/W)

100% Rg tested

Lower Conduction Losses

Increased Power Density

Increased Reliability

Low Profile (<0.9 mm)

results in Increased Power Density

⇒

Industry-Standard Pinout

Multi-Vendor Compatibility

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Industrial Qualification

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

Orderable part number

Package Type

Standard Pack

Note

Form

Tape and Reel

Quantity

4000

IRFH5215TRPBF

IRFH5215TR2PBF

PQFN 5mm x 6mm

400

EOL notice #259

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Max.

150

± 20

5.0

Units

V_DS

V_GS

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

4.0

108

3.6

Power Dissipation

P_D@T_A= 25°C

P_D@ T_C(Bottom)= 25°C

Power Dissipation

104

Linear Derating Factor

0.029

-55 to + 150

W/°C

°C

T_J

Operating Junction and

Storage Temperature Range

T_STG

Notes through ꢀ are on page 9

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March 16, 2015

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