Datasheet > IRFH5250DPBF

IRFH5250DPBF

更新时间： 2024-11-06 12:08:39

品牌	Logo	应用领域
英飞凌 - INFINEON		转换器
页数	文件大小	规格书
8页	214K
描述
Synchronous MOSFET for high frequency buck converters

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中文翻译

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数据手册

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IRFH5250DPBF 数据手册

IRFH5250DPbF

HEXFET^®Power MOSFET

V_DS

R_{DS(on) max}

(@V_GS= 10V)

V_{SD max}

1.4

m

0.6

(@I_S= 5.0A)

t_{rr (typical)}

I_D

PQFN 5X6 mm

100

(@T_mb= 25°C)

Applications

Synchronous MOSFET for high frequency buck converters

FeaturesandBenefits

Benefits

Features

Low RDSon (<1.4m)

Lower Conduction Losses

Lower Switching Losses

Enable better thermal dissipation

Increased Reliability

Schottky Intrinsic Diode with Low Forward Voltage

Low Thermal Resistance to PCB (<0.8°C/W)

100% Rg tested

Low Profile (<0.9 mm)

results in Increased Power Density

Industry-Standard Pinout

Multi-Vendor Compatibility



Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Industrial Qualification

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

Orderable part number

Package Type

Standard Pack

Form

Tape and Reel

Note

Quantity

4000

IRFH5250DTRPBF

IRFH5250DTR2PBF

PQFN 5mm x 6mm

400

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Max.

Units

V_DS

± 20

I @ T_A= 25°C

Continuous Drain Current, V_GS@ 10V

I @ T_A= 70°C

100

I @ T_mb= 25°C

I @ T_mb= 100°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

400

3.6

Power Dissipation

P @T_A= 25°C

P @T_mb= 25°C

156

Linear Derating Factor

Operating Junction and

0.029

-55 to + 150

W/°C

°C

Storage Temperature Range

STG

Notes through are on page 8

www.irf.com

January 21, 2013

12 3 4 5 6 7 8

中文翻译

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