Datasheet > IRFH5306PBF_15

IRFH5306PBF_15

更新时间： 2024-11-24 01:15:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	243K
描述
Control MOSFET for buck converters

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中文翻译

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数据手册

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IRFH5306PBF_15 数据手册

IRFH5306PbF

HEXFET^®Power MOSFET

V_DS

R_{DS(on) max}

(@V_GS= 10V)

Q_{g (typical)}

8.1

mΩ

7.8

1.4

R_{G (typical)}

I_D

(@T_c(Bottom)= 25°C)

PQFN 5X6 mm

Applications

• Control MOSFET for buck converters

Features and Benefits

Features

Benefits

Low charge (typical 7.8nC)

Low thermal resistance to PCB (< 4.9°C/W)

100% Rg tested

Lower switching losses

Increased power density

Increased reliability

Low profile (< 0.9 mm)

results in Increased power density

Industry-standard pinout

Multi-vendor compatibility

⇒

Compatible with existing Surface Mount Techniques

RoHS compliant containing no lead, no bromide and no halogen

MSL1, Industrial qualification

Easier manufacturing

Environmentally friendly

Increased reliability

Orderable part number

Package Type

Standard Pack

Note

Form

Tape and Reel

Quantity

4000

IRFH5306TRPBF

IRFH5306TR2PBF

PQFN 5mm x 6mm

400

EOL notice #259

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Max.

Units

V_DS

V_GS

±20

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Power Dissipation

P_D@T_A= 25°C

P_D@ T_C(Bottom)= 25°C

3.6

Power Dissipation

Linear Derating Factor

0.029

W/°C

°C

T_J

Operating Junction and

Storage Temperature Range

-55 to + 150

T_STG

Notes through ꢀ are on page 9

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March 17, 2015

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