Datasheet > IRFH5250PBF

IRFH5250PBF

更新时间： 2024-11-06 05:39:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	304K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册

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IRFH5250PBF 数据手册

PD-96265

IRFH5250PbF

HEXFET^®Power MOSFET

V_DS

R_{DS(on) max}

(@V_GS= 10V)

1.15

Q_{g (typical)}

R_{G (typical)}

1.3

I_D

PQFN 5X6 mm

100

(@T_c(Bottom)= 25°C)

Applications

• OR-ing MOSFET for 12V (typical) Bus in-Rush Current

• Battery Operated DC Motor Inverter MOSFET

FeaturesandBenefits

Features

Benefits

Ω

Low RDSon (<1.15 m )

Lower Conduction Losses

Enable better thermal dissipation

Increased Reliability

Low Thermal Resistance to PCB (<0.5°C/W)

100% Rg tested

Low Profile (<0.9 mm)

results in Increased Power Density

Industry-Standard Pinout

⇒

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Industrial Qualification

Orderable part number

Package Type

Standard Pack

Form

Tape and Reel

Note

Quantity

4000

IRFH5250TRPBF

IRFH5250TR2PBF

PQFN 5mm x 6mm

400

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Max.

Units

V_DS

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

@ T_C(Bottom)= 25°C

@ T_C(Bottom)= 100°C

100

400

3.6

Power Dissipation

@T_A= 25°C

Power Dissipation

@T_C(Bottom)= 25°C

250

0.029

-55 to + 150

Linear Derating Factor

Operating Junction and

W/°C

°C

Storage Temperature Range

STG

Notes through are on page 8

www.irf.com

09/18/09

12 3 4 5 6 7 8

中文翻译

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