Datasheet > IRFH5300TR2PBF

IRFH5300TR2PBF

更新时间： 2024-11-06 05:39:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	346K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册
替代型号

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IRFH5300TR2PBF 数据手册

PD -97410

IRFH5300PbF

HEXFET^®Power MOSFET

V_DS

R_{DS(on) max}

(@V_GS= 10V)

Q_{g (typical)}

1.4

1.3

R_{G (typical)}

I_D

100

PQFN 5X6 mm

(@T_c(Bottom)= 25°C)

Applications

• OR-ing MOSFET for 12V (typical) Bus in-Rush Current

• Battery Operated DC Motor Inverter MOSFET

Features and Benefits

Features

Benefits

Low R_DSon(≤ 1.4mΩ)

Low Thermal Resistance to PCB (≤ 0.5°C/W)

100% Rg tested

Lower Conduction Losses

Enable better thermal dissipation

Increased Reliability

Low Profile (≤ 0.9 mm)

results in Increased Power Density

Industry-Standard Pinout

⇒

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Industrial Qualification

Orderable part number

Package Type

Standard Pack

Note

Form

Tape and Reel

Quantity

4000

IRFH5300TRPBF

IRFH5300TR2PBF

PQFN 5mm x 6mm

400

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Max.

Units

V_DS

V_GS

± 20

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

100

400

3.6

Power Dissipation

P_D@T_A= 25°C

P_D@ T_C(Bottom)= 25°C

Power Dissipation

250

Linear Derating Factor

Operating Junction and

0.029

-55 to + 150

W/°C

°C

T_J

T_STG

Storage Temperature Range

Notes through are on page 8

www.irf.com

9/17/09

12 3 4 5 6 7 8

中文翻译

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IRFH5300TR2PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFH5300TRPBF	INFINEON	类似代替	HEXFET Power MOSFET

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