Datasheet > 晶体管 > 功率场效应晶体管> IRFH5304TR2PBF

IRFH5304TR2PBF

更新时间： 2024-11-09 12:56:23

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体转换器晶体管功率场效应晶体管开关脉冲光电二极管
页数	文件大小	规格书
8页	349K
描述
Control MOSFET for buck converters

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中文翻译

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数据手册
替代型号

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IRFH5304TR2PBF 数据手册

PD -97447

IRFH5304PbF

HEXFET^®Power MOSFET

V_DS

4.5

mΩ

R_{DS(on) max}

(@V_GS= 10V)

Q_{g (typical)}

I_D

(@T_c(Bottom)= 25°C)

PQFN 5X6 mm

Applications

• Control MOSFET for buck converters

Features and Benefits

Features

Benefits

Low charge (typical 16nC)

Low Thermal Resistance to PCB (<2.7°C/W)

100% Rg tested

Lower Switching Losses

Increased Power Density

Increased Reliability

Low Profile (<0.9 mm)

results in Increased Power Density

Industry-Standard Pinout

Multi-Vendor Compatibility

⇒

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Industrial Qualification

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

Orderable part number

Package Type

Standard Pack

Note

Form

Tape and Reel

Quantity

4000

IRFH5304TRPBF

IRFH5304TR2PBF

PQFN 5mm x 6mm

400

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Max.

Units

V_DS

V_GS

± 20

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_{C( Bot tom)}= 25°C

I_D@ T_C(Bottom)= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

320

Power Dissipation

P_D@T_A= 25°C

P_D@ T_C(Bottom)= 25°C

3.6

Power Dissipation

Linear Derating Factor

0.029

-55 to + 150

W/°C

°C

T_J

Operating Junction and

Storage Temperature Range

T_STG

Notes through are on page 8

www.irf.com

2/8/10

12 3 4 5 6 7 8

中文翻译

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IRFH5304TR2PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFH5304TRPBF	INFINEON	功能相似	Control MOSFET for buck converters

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