Datasheet > IRFH5301TR2PBF

IRFH5301TR2PBF

更新时间： 2024-11-06 05:39:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	305K
描述
HEXFET Power MOSFET

阅读下载

中文翻译

获取价格

数据手册
替代型号

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IRFH5301TR2PBF 数据手册

PD-96276

IRFH5301PbF

HEXFET^®Power MOSFET

V_DS

R_{DS(on) max}

(@V_GS= 10V)

1.85

Ω

Q_{g (typical)}

R_{G (typical)}

1.5

Ω

I_D

PQFN 5X6 mm

100

(@T_c(Bottom)= 25°C)

Applications

• OR-ing MOSFET for 12V (typical) Bus in-Rush Current

• Synchronous MOSFET for Buck Converters

• Battery Operated DC Motor Inverter MOSFET

FeaturesandBenefits

Features

Benefits

Low RDSon (<1.85mΩ)

Low Thermal Resistance to PCB (<1.1°C/W)

100% Rg tested

Lower Conduction Losses

Increased Power Density

Increased Reliability

Low Profile (<0.9 mm)

results in Increased Power Density

Industry-Standard Pinout

Multi-Vendor Compatibility

⇒

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Industrial Qualification

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

Orderable part number

Package Type

Standard Pack

Form

Tape and Reel

Note

Quantity

4000

IRFH5301TRPBF

IRFH5301TR2PBF

PQFN 5mm x 6mm

400

Absolute Maximum Ratings

Max.

Parameter

Units

V_DS

Drain-to-Source Voltage

± 20

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

100

400

3.6

@ T_C(Bottom)= 25°C

@ T_C(Bottom)= 100°C

@T_A= 25°C

Power Dissipation

W/°C

°C

110

0.029

Power Dissipation

@T_C(Bottom)= 25°C

Linear Derating Factor

-55 to + 150

Operating Junction and

Storage Temperature Range

STG

Notes through are on page 8

www.irf.com

11/18/09

12 3 4 5 6 7 8

中文翻译

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IRFH5301TR2PBF 替代型号

型号	品牌	替代类型	描述	数据表
BSC020N03MSGATMA1	INFINEON	功能相似	Power Field-Effect Transistor, 25A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Me
IRFH5301TRPBF	INFINEON	功能相似	HEXFET Power MOSFET

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