Datasheet > IRFH5303TRPBF

IRFH5303TRPBF

更新时间： 2024-11-10 01:23:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	241K
描述
Control MOSFET for high frequency buck converters

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中文翻译

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数据手册

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IRFH5303TRPBF 数据手册

IRFH5303PbF

HEXFET^®Power MOSFET

V_DS

R_{DS(on) max}

(@V_GS= 10V)

Q_{g (typical)}

4.2

0.6

R_{G (typical)}

I_D

PQFN 5X6 mm

(@T_c(Bottom)= 25°C)

Applications

• Control MOSFET for high frequency buck converters

Features and Benefits

Features

Benefits

Low charge (typical 15nC)

Low R_g(typical 0.6 Ω)

Lower Switching Losses

Low Thermal Resistance to PCB (<2.7°C/W)

100% Rg tested

Increased Power Density

Increased Reliability

Low Profile (<0.9 mm)

results in Increased Power Density

Industry-Standard Pinout

⇒

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Industrial Qualification

Standard Pack

Form

Orderable part number

Package Type

Note

Quantity

4000

IRFH5303TRPBF

IRFH5303TR2PBF

PQFN 5mm x 6mm

Tape and Reel

400

EOL notice # 259

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Max.

Units

V_DS

V_GS

Gate-to-Source Voltage

± 20

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

330

3.6

Power Dissipation

P_D@T_A= 25°C

P_D@ T_C(Bottom)= 25°C

Power Dissipation

Linear Derating Factor

Operating Junction and

0.029

-55 to + 150

W/°C

°C

T_J

T_STG

Storage Temperature Range

Notes through ꢀ are on page 9

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March 19, 2015

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