5秒后页面跳转
IRFH5302TRPBF PDF预览

IRFH5302TRPBF

更新时间: 2024-11-06 05:39:27
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 205K
描述
HEXFET Power MOSFET

IRFH5302TRPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:1.1雪崩能效等级(Eas):130 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):100 A
最大漏极电流 (ID):32 A最大漏源导通电阻:0.0035 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-N5
湿度敏感等级:1元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):100 W最大脉冲漏极电流 (IDM):400 A
子类别:FET General Purpose Power表面贴装:YES
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFH5302TRPBF 数据手册

 浏览型号IRFH5302TRPBF的Datasheet PDF文件第2页浏览型号IRFH5302TRPBF的Datasheet PDF文件第3页浏览型号IRFH5302TRPBF的Datasheet PDF文件第4页浏览型号IRFH5302TRPBF的Datasheet PDF文件第5页浏览型号IRFH5302TRPBF的Datasheet PDF文件第6页浏览型号IRFH5302TRPBF的Datasheet PDF文件第7页 
PD -97156  
IRFH5302PbF  
HEXFET® Power MOSFET  
VDS  
30  
V
RDS(on) max  
(@VGS = 10V)  
2.1  
Ω
m
Qg (typical)  
RG (typical)  
29  
1.6  
nC  
Ω
ID  
100  
A
(@Tc(Bottom) = 25°C)  
PQFN 5X6 mm  
Applications  
OR-ing MOSFET for 12V (typical) Bus in-Rush Current  
Synchronous MOSFET for buck converters  
Battery Operated DC Motor Inverter MOSFET  
Features and Benefits  
Features  
Benefits  
Ω)  
Low RDSon ( 2.1m  
Lower Conduction Losses  
Enable better thermal dissipation  
Increased Reliability  
Low Thermal Resistance to PCB ( 1.2°C/W)  
100% Rg tested  
Low Profile ( 0.9 mm)  
results in Increased Power Density  
Industry-Standard Pinout  
Multi-Vendor Compatibility  
Easier Manufacturing  
Environmentally Friendlier  
Increased Reliability  
Compatible with Existing Surface Mount Techniques  
RoHS Compliant Containing no Lead, no Bromide and no Halogen  
MSL1, Industrial Qualification  
Orderable part number  
Package Type  
Standard Pack  
Note  
Form  
Tape and Reel  
Tape and Reel  
Quantity  
4000  
IRFH5302TRPBF  
IRFH5302TR2PBF  
PQFN 5mm x 6mm  
PQFN 5mm x 6mm  
400  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Max.  
30  
± 20  
32  
Units  
VDS  
VGS  
V
ID @ TA = 25°C  
ID @ TA = 70°C  
ID @ TC(Bottom) = 25°C  
ID @ TC(Bottom) = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
26  
A
100  
100  
400  
3.6  
Power Dissipation  
Power Dissipation  
PD @TA = 25°C  
PD @ TC(Bottom) = 25°C  
W
100  
Linear Derating Factor  
Operating Junction and  
Storage Temperature Range  
0.029  
-55 to + 150  
W/°C  
°C  
TJ  
TSTG  
Notes  through † are on page 8  
www.irf.com  
1
10/20/09  

IRFH5302TRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRFH5302TR2PBF INFINEON

功能相似

HEXFET Power MOSFET

与IRFH5302TRPBF相关器件

型号 品牌 获取价格 描述 数据表
IRFH5303PBF INFINEON

获取价格

Control MOSFET for high frequency buck converters
IRFH5303TRPBF INFINEON

获取价格

Control MOSFET for high frequency buck converters
IRFH5304PBF INFINEON

获取价格

Control MOSFET for buck converters
IRFH5304TR2PBF INFINEON

获取价格

Control MOSFET for buck converters
IRFH5304TRPBF INFINEON

获取价格

Control MOSFET for buck converters
IRFH5306PBF INFINEON

获取价格

Control MOSFET for buck converters
IRFH5306PBF_15 INFINEON

获取价格

Control MOSFET for buck converters
IRFH5406PBF INFINEON

获取价格

HEXFET Power MOSFET
IRFH5406TR2PBF INFINEON

获取价格

HEXFET Power MOSFET
IRFH5406TRPBF INFINEON

获取价格

HEXFET Power MOSFET