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IRFH5302DPBF

更新时间： 2024-11-06 12:56:23

品牌	Logo	应用领域
英飞凌 - INFINEON		转换器
页数	文件大小	规格书
8页	331K
描述
Synchronous MOSFET for high frequency buck converters

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中文翻译

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数据手册

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IRFH5302DPBF 数据手册

IRFH5302PbF

HEXFET^®Power MOSFET

V_DS

R_{DS(on) max}

(@V_GS= 10V)

2.5

mΩ

V_{SD max}

(@I_S= 5.0A)

t_{rr (typical)}

0.65

I_D

PQFN 5X6 mm

100

(@T_c(Bottom)= 25°C)

Applications

• Synchronous MOSFET for high frequency buck converters

FeaturesandBenefits

Features

Benefits

Low RDSon (<2.5m )

Ω

Lower Conduction Losses

Lower Switching Losses

Increased Power Density

Increased Reliability

Schottky Intrinsic Diode with Low Forward Voltage

Low Thermal Resistance to PCB (<1.2°C/W)

100% Rg tested

Low Profile (<0.9 mm)

results in Increased Power Density

Industry-Standard Pinout

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

⇒

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Industrial Qualification

Orderable part number

Package Type

Standard Pack

Form

Tape and Reel

Note

Quantity

4000

IRFH5302DTRPBF

IRFH5302DTR2PBF

PQFN 5mm x 6mm

400

EOL Notice #259

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Max.

Units

V_DS

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

@ T_C(Bottom)= 25°C

@ T_C(Bottom)= 100°C

100

400

3.6

Power Dissipation

@T_A= 25°C

Power Dissipation

@T_C(Bottom)= 25°C

104

0.83

-55 to + 150

Linear Derating Factor

Operating Junction and

W/°C

°C

Storage Temperature Range

STG

Notes through are on page 8

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January 6, 2014

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