Datasheet > IRFH5255TR2PBF

IRFH5255TR2PBF

更新时间： 2024-11-07 01:21:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	221K
描述
Control MOSFET for high Frequency Buck Converters

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中文翻译

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数据手册

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IRFH5255TR2PBF 数据手册

IRFH5255PbF

HEXFET^®Power MOSFET

V_DS

R_{DS(on) max}

(@V_GS= 10V)

6.0

Q_{g (typical)}

R_{G (typical)}

7.0

0.6

I_D

PQFN 5X6 mm

(@T_c(Bottom)= 25°C)

Applications

• Control MOSFET for high Frequency Buck Converters

FeaturesandBenefits

Features

Benefits

Low Charge (typical 7nC)

Low Rg (typical 0.6Ω)

Low Thermal Resistance to PCB (<4.9°C/W)

100% Rg tested

Lower Switching Losses

Increased Power Density

Increased Reliability

Low Profile (<0.9 mm)

results in Increased Power Density

Industry-Standard Pinout

⇒

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Industrial Qualification

Standard Pack

Orderable part number

Package Type

Note

Form

Quantity

4000

IRFH5255TRPbF

IRFH5255TR2PbF

PQFN 5mm x 6mm

Tape and Reel

PQFN 5mm x 6mm

400

EOL notice # 259

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

@ T_C(Bottom)= 25°C

@ T_C(Bottom)= 100°C

Power Dissipation

@T_A= 25°C

3.6

Power Dissipation

@T_C(Bottom)= 25°C

0.029

-55 to + 150

Linear Derating Factor

Operating Junction and

W/°C

°C

Storage Temperature Range

STG

Notes through ꢀ are on page 8

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December 16, 2013

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