Datasheet > IRFH5220PBF_15

IRFH5220PBF_15

更新时间： 2024-11-07 01:15:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	243K
描述
Secondary Side Synchronous Rectification

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFH5220PBF_15 数据手册

IRFH5220PbF

HEXFET^®Power MOSFET

V_DS

200

R_{DS(on) max}

(@V_GS= 10V)

Q_{g (typical)}

99.9

2.3

R_{G (typical)}

I_D

PQFN 5X6 mm

(@T_c(Bottom)= 25°C)

Applications

• Secondary Side Synchronous Rectification

• Inverters for DC Motors

• DC-DC Brick Applications

• Boost Converters

Features and Benefits

Features

Benefits

Low R_DSon

Lower Conduction Losses

Enable better thermal dissipation

Increased Reliability

Low Thermal Resistance to PCB (≤ 1.2°C/W)

100% Rg tested

Low Profile (≤ 0.9 mm)

results in Increased Power Density

Industry-Standard Pinout

⇒

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Industrial Qualification

Standard Pack

Form

Orderable part number

Package Type

Note

Quantity

4000

IRFH5220TRPBF

IRFH5220TR2PBF

PQFN 5mm x 6mm

Tape and Reel

400

EOL notice # 259

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Max.

200

± 20

3.8

3.0

Units

V_DS

V_GS

Gate-to-Source Voltage

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

I_D@ T_C(Top)= 25°C

I_D@ T_C(Top)= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

5.8

3.7

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Power Dissipation

P_D@T_A= 25°C

P_D@ T_C(Top)= 25°C

3.6

8.3

Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

0.07

-55 to + 150

W/°C

°C

T_J

T_STG

Notes through ꢀ are on page 8

Submit Datasheet Feedback

March 19, 2015

12 3 4 5 6 7...9

中文翻译

下载PDF

与IRFH5220PBF_15相关器件

型号	品牌	获取价格	描述	数据表
IRFH5220TR2PBF	INFINEON	获取价格	Secondary Side Synchronous Rectification
IRFH5220TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 3.8A I(D), 200V, 0.0999ohm, 1-Element, N-Channel, Silicon,
IRFH5250	INFINEON	获取价格	The StrongIRFET™ power MOSFET family is optim
IRFH5250DPBF	INFINEON	获取价格	Synchronous MOSFET for high frequency buck converters
IRFH5250DTR2PBF	INFINEON	获取价格	Synchronous MOSFET for high frequency buck converters
IRFH5250DTRPBF	INFINEON	获取价格	Synchronous MOSFET for high frequency buck converters
IRFH5250PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFH5250TR2PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFH5250TRPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFH5255PBF	INFINEON	获取价格	Control MOSFET for high Frequency Buck Converters