Datasheet > IRFH5220PBF

IRFH5220PBF

更新时间： 2024-11-07 01:15:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	243K
描述
Secondary Side Synchronous Rectification

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中文翻译

获取价格

数据手册

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IRFH5220PBF 数据手册

IRFH5220PbF

HEXFET^®Power MOSFET

V_DS

200

R_{DS(on) max}

(@V_GS= 10V)

Q_{g (typical)}

99.9

2.3

R_{G (typical)}

I_D

PQFN 5X6 mm

(@T_c(Bottom)= 25°C)

Applications

• Secondary Side Synchronous Rectification

• Inverters for DC Motors

• DC-DC Brick Applications

• Boost Converters

Features and Benefits

Features

Benefits

Low R_DSon

Lower Conduction Losses

Enable better thermal dissipation

Increased Reliability

Low Thermal Resistance to PCB (≤ 1.2°C/W)

100% Rg tested

Low Profile (≤ 0.9 mm)

results in Increased Power Density

Industry-Standard Pinout

⇒

Multi-Vendor Compatibility

Easier Manufacturing

Environmentally Friendlier

Increased Reliability

Compatible with Existing Surface Mount Techniques

RoHS Compliant Containing no Lead, no Bromide and no Halogen

MSL1, Industrial Qualification

Standard Pack

Form

Orderable part number

Package Type

Note

Quantity

4000

IRFH5220TRPBF

IRFH5220TR2PBF

PQFN 5mm x 6mm

Tape and Reel

400

EOL notice # 259

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Max.

200

± 20

3.8

3.0

Units

V_DS

V_GS

Gate-to-Source Voltage

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_D@ T_C(Bottom)= 25°C

I_D@ T_C(Bottom)= 100°C

I_D@ T_C(Top)= 25°C

I_D@ T_C(Top)= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

5.8

3.7

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Power Dissipation

P_D@T_A= 25°C

P_D@ T_C(Top)= 25°C

3.6

8.3

Power Dissipation

Linear Derating Factor

Operating Junction and

Storage Temperature Range

0.07

-55 to + 150

W/°C

°C

T_J

T_STG

Notes through ꢀ are on page 8

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March 19, 2015

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中文翻译

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