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IRFH5210TRPBF PDF预览

IRFH5210TRPBF

更新时间: 2024-10-14 11:48:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
8页 234K
描述
HEXFET Power MOSFET

IRFH5210TRPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:1.13Is Samacsys:N
雪崩能效等级(Eas):86 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):55 A最大漏极电流 (ID):10 A
最大漏源导通电阻:0.0149 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-N5JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:5工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):104 W最大脉冲漏极电流 (IDM):220 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:NO LEAD端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFH5210TRPBF 数据手册

 浏览型号IRFH5210TRPBF的Datasheet PDF文件第2页浏览型号IRFH5210TRPBF的Datasheet PDF文件第3页浏览型号IRFH5210TRPBF的Datasheet PDF文件第4页浏览型号IRFH5210TRPBF的Datasheet PDF文件第5页浏览型号IRFH5210TRPBF的Datasheet PDF文件第6页浏览型号IRFH5210TRPBF的Datasheet PDF文件第7页 
PD - 97490  
IRFH5210PbF  
HEXFET® Power MOSFET  
VDS  
100  
V
RDS(on) max  
(@VGS = 10V)  
Qg (typical)  
14.9  
m
39  
nC  
RG (typical)  
1.8  
ID  
55  
A
PQFN 5X6 mm  
(@Tc(Bottom) = 25°C)  
Applications  
Secondary Side Synchronous Rectification  
Inverters for DC Motors  
DC-DC Brick Applications  
Boost Converters  
Features and Benefits  
Features  
Benefits  
Low RDSon (14.9mat Vgs = 10V)  
Low Thermal Resistance to PCB (1.2°C/W)  
100% Rg tested  
Lower Conduction Losses  
Enables better thermal dissipation  
Increased Reliability  
Low Profile (0.9 mm)  
results in Increased Power Density  
Industry-Standard Pinout  
Multi-Vendor Compatibility  
Easier Manufacturing  
Environmentally Friendlier  
Increased Reliability  
Compatible with Existing Surface Mount Techniques  
RoHS Compliant Containing no Lead, no Bromide and no Halogen  
MSL1, Industrial Qualification  
Orderable part number  
Package Type  
Standard Pack  
Note  
Form  
Tape and Reel  
Quantity  
4000  
IRFH5210TRPBF  
IRFH5210TR2PBF  
PQFN 5mm x 6mm  
PQFN 5mm x 6mm  
Tape and Reel  
1000  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Max.  
100  
±20  
10  
Units  
VDS  
V
VGS  
ID @ TA = 25°C  
ID @ TA = 70°C  
ID @ TC(Bottom) = 25°C  
ID @ TC(Bottom) = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
8.1  
55  
A
35  
220  
3.6  
104  
Power Dissipation  
PD @TA = 25°C  
PD @ TC(Bottom) = 25°C  
W
W/°C  
°C  
Power Dissipation  
Linear Derating Factor  
0.029  
-55 to + 150  
TJ  
Operating Junction and  
Storage Temperature Range  
TSTG  
Notes  through are on page 8  
www.irf.com  
1
04/12/10  

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