IRFE430PBF

更新时间： 2024-11-01 12:58:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲
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IRFE430PBF 数据手册

Provisional Data Sheet No. PD - 9.1719

IRFE430

REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802U

HEXFET^®TRANSISTOR

JANTXV2N6802U

[REF:MIL-PRF-19500/557]

N-CHANNEL

Product Summary

500Volt, 1.50Ω, HEXFET

The leadless chip carrier (LCC) package represents

the logical next step in the continual evolution of

surface mount technology. The LCC provides

designers the extra flexibility they need to increase

circuit board density. International Rectifier has

engineered the LCC package to meet the specific

needs of the power market by increasing the size of

the bottom source pad, thereby enhancing the

thermal and electrical performance. The lid of the

package is grounded to the source to reduce RF

interference.

Part Number

BVDSS

RDS(on)

IRFE430

500V

1.50Ω

2.5A

Features:

Hermetically Sealed

Simple Drive Requirements

Ease of Paralleling

Small footprint

Surface Mount

Lightweight

HEXFET transistors also feature all of the well-es-

tablished advantages of MOSFETs, such as volt-

age control, very fast switching, ease of paralleling

and electrical parameter temperature stability.They

are well-suited for applications such as switching

power supplies, motor controls, inverters, choppers,

audio amplifiers and high-energy pulse circuits, and

virtually any application where high reliability is re-

quired.

Absolute Maximum Ratings

Parameter

IRFE430, JANTX-, JANTXV-, 2N6802U Units

@ V

= 10V, T = 25°C Continuous Drain Current

2.5

@ V

= 10V, T = 100°C Continuous Drain Current

1.5

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

W/K ꢀ

0.20

±20

Single Pulse Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

0.31

6.2

dv/dt

V/ns

-55 to 150

^oC

Storage Temperature Range

STG

300 ( for 5 seconds)

0.42 (typical)

Surface Temperature

Weight

12/3097

12 3 4 5 6 7 8

中文翻译

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IRFE430PBF 替代型号

型号	品牌	替代类型	描述	数据表
JANTXV2N6802U	INFINEON	功能相似	HEXFET TRANSISTOR
IRFE430	INFINEON	功能相似	HEXFET TRANSISTOR

与IRFE430PBF相关器件

型号	品牌	获取价格	描述	数据表
IRFE430SCS	INFINEON	获取价格	暂无描述
IRFE430SCV	INFINEON	获取价格	Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, M
IRFE430SCVPBF	INFINEON	获取价格	Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, M
IRFE430SCX	INFINEON	获取价格	Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, M
IRFE430SCXPBF	INFINEON	获取价格	Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, M
IRFE9024	INFINEON	获取价格	60V, P-CHANNEL
IRFE9110	SEME-LAB	获取价格	P-CHANNEL POWER MOSFET
IRFE9110	INFINEON	获取价格	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)
IRFE9120	INFINEON	获取价格	HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)
IRFE9120	SEME-LAB	获取价格	P–CHANNEL POWER MOSFET

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