IRFE9120SCV

更新时间： 2024-09-27 13:08:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲
页数	文件大小	规格书
7页	139K
描述
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18

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数据手册

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IRFE9120SCV 数据手册

PD-93988

IRFE9120

JANTX2N6845U

JANTXV2N6845U

REPETITIVEAVALANCHEANDdv/dtRATED

HEXFET TRANSISTORS

SURFACE MOUNT (LCC-18)

[REF:MIL-PRF-19500/563]

100V, P-CHANNEL

Product Summary

Part Number

BVDSS

RDS(on)

IRFE9120

-100V

0.60Ω −3.5A

LCC-18

The leadless chip carrier (LCC) package represents the

logical next step in the continual evolution of surface

mount technology. Desinged to be a close replacement

for the TO-39 package, the LCC will give designers the

extra flexibility they need to increase circuit board den-

sity. International Rectifier has engineered the LCC pack-

age to meet the specific needs of the power market by

increasing the size of the bottom source pad, thereby

enhancing the thermal and electrical performance. The

lid of the package is grounded to the source to reduce

RF interference.

Features:

Surface Mount

Small Footprint

Alternative to TO-39 Package

Hermetically Sealed

Dynamic dv/dt Rating

Avalanche Energy Rating

Simple Drive Requirements

Light Weight

Absolute Maximum Ratings

Parameter

Units

@ V

= -10V, T = 25°C Continuous Drain Current

-3.5

-2.2

-14

= -10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

W/°C

0.11

±20

115

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

dv/dt

-5.0

-55 to 150

V/ns

Storage Temperature Range

^oC

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5 S)

0.42(typical)

For footnotes refer to the last page

www.irf.com

10/25/00

12 3 4 5 6 7

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