Datasheet > IRFE9230

IRFE9230

更新时间： 2024-09-27 03:36:31

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管局域网
页数	文件大小	规格书
7页	203K
描述
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IRFE9230 数据手册

PD - 91717B

IRFE9230

JANTX2N6851U

JANTXV2N6851U

REPETITIVEAVALANCHEANDdv/dtRATED

HEXFET TRANSISTORS

SURFACE MOUNT (LCC-18)

[REF:MIL-PRF-19500/564]

200V, P-CHANNEL

Product Summary

Part Number

BVDSS

RDS(on)

IRFE9230

-200V

0.80Ω

-4.0A

LCC-18

The leadless chip carrier (LCC) package represents the

logical next step in the continual evolution of surface

mount technology. Desinged to be a close replacement

for the TO-39 package, the LCC will give designers the

extra flexibility they need to increase circuit board den-

sity. International Rectifier has engineered the LCC pack-

age to meet the specific needs of the power market by

increasing the size of the bottom source pad, thereby

enhancing the thermal and electrical performance. The

lid of the package is grounded to the source to reduce

RF interference.

Features:

Surface Mount

Small Footprint

Alternative to TO-39 Package

Hermetically Sealed

Dynamic dv/dt Rating

Avalanche Energy Rating

Simple Drive Requirements

Light Weight

Absolute Maximum Ratings

Parameter

Units

@ V

= -10V, T = 25°C Continuous Drain Current

= -10V, T = 100°C Continuous Drain Current

-4.0

-2.4

-16

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

W/°C

V/ns

0.20

±20

171

Gate-to-Source Voltage

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

dv/dt

-1.1

-55 to 150

Storage Temperature Range

^oC

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5 S)

0.42(typical)

For footnotes refer to the last page

www.irf.com

01/17/01

12 3 4 5 6 7

中文翻译

下载PDF

IRFE9230 替代型号

型号	品牌	替代类型	描述	数据表
JANTXV2N6851U	INFINEON	完全替代	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)
JANTX2N6851U	INFINEON	完全替代	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)
JANTX2N6851	INFINEON	类似代替	POWER MOSFET P-CHANNEL(BVdss=-200V, Rds(on)=0.80ohm, Id=-4.0A)

与IRFE9230相关器件

型号	品牌	获取价格	描述	数据表
IRFEA240	INFINEON	获取价格	HEXFET POWER MOSFET SURFACE MOUNT (LCC-28)
IRFEA240PBF	INFINEON	获取价格	Power Field-Effect Transistor, 11A I(D), 200V, 0.18ohm, 4-Element, N-Channel, Silicon, Met
IRFF014	INFINEON	获取价格	Power Field-Effect Transistor, 6.3A I(D), 60V, 2ohm, 1-Element, N-Channel, Silicon, Metal-
IRFF014PBF	INFINEON	获取价格	Power Field-Effect Transistor, 6.3A I(D), 60V, 2ohm, 1-Element, N-Channel, Silicon, Metal-
IRFF024	INFINEON	获取价格	60V, N-CHANNEL
IRFF024	SEME-LAB	获取价格	N-Channel MOSFET in a Hermetically sealed TO39
IRFF034	SEME-LAB	获取价格	Bipolar NPN Device in a Hermetically sealed TO39 Metal Package
IRFF034	INFINEON	获取价格	Power Field-Effect Transistor, 16.2A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Me
IRFF110	VISHAY	获取价格	Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Met
IRFF110	FAIRCHILD	获取价格	Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Met

与IRFE9230相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

19
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

15
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

18
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

28

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFE9230

IRFE9230 数据手册

IRFE9230 替代型号

与IRFE9230相关器件

与IRFE9230相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFE9230

IRFE9230 数据手册

IRFE9230 替代型号

与IRFE9230相关器件

与IRFE9230相关文章

您还可以找

您在本页遇到什么问题？