是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | LCC |
包装说明: | CHIP CARRIER, R-CQCC-N18 | 针数: | 18 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.13 | 其他特性: | HIGH RELIABILITY |
雪崩能效等级(Eas): | 72 mJ | 外壳连接: | SOURCE |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (ID): | 1.3 A | 最大漏源导通电阻: | 3.45 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-CQCC-N18 |
元件数量: | 1 | 端子数量: | 18 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | P-CHANNEL | 功耗环境最大值: | 11 W |
最大脉冲漏极电流 (IDM): | 5.2 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 55 ns | 最大开启时间(吨): | 40 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFE9220 | INFINEON |
获取价格 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) | |
IRFE9220PBF | INFINEON |
获取价格 |
暂无描述 | |
IRFE9220SCXPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2.1A I(D), 200V, 1.725ohm, 1-Element, P-Channel, Silicon, M | |
IRFE9230 | INFINEON |
获取价格 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) | |
IRFE9230 | SEME-LAB |
获取价格 |
P-CHANNEL POWER MOSFET | |
IRFEA240 | INFINEON |
获取价格 |
HEXFET POWER MOSFET SURFACE MOUNT (LCC-28) | |
IRFEA240PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 200V, 0.18ohm, 4-Element, N-Channel, Silicon, Met | |
IRFF014 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.3A I(D), 60V, 2ohm, 1-Element, N-Channel, Silicon, Metal- | |
IRFF014PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 6.3A I(D), 60V, 2ohm, 1-Element, N-Channel, Silicon, Metal- | |
IRFF024 | INFINEON |
获取价格 |
60V, N-CHANNEL |