是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.92 | 最大漏极电流 (Abs) (ID): | 0.8 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-609代码: | e0 |
工作模式: | ENHANCEMENT MODE | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 3 W | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFE9130 | INFINEON |
获取价格 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR |
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IRFE9130 | SEME-LAB |
获取价格 |
P-CHANNEL POWER MOSFET |
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IRFE9130SCVPBF | INFINEON |
获取价格 |
暂无描述 |
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IRFE9210 | INFINEON |
获取价格 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) |
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IRFE9220 | INFINEON |
获取价格 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) |
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IRFE9220PBF | INFINEON |
获取价格 |
暂无描述 |
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IRFE9220SCXPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 2.1A I(D), 200V, 1.725ohm, 1-Element, P-Channel, Silicon, M |
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IRFE9230 | INFINEON |
获取价格 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) |
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IRFE9230 | SEME-LAB |
获取价格 |
P-CHANNEL POWER MOSFET |
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IRFEA240 | INFINEON |
获取价格 |
HEXFET POWER MOSFET SURFACE MOUNT (LCC-28) |
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