Datasheet > IRFB7446GPBF

IRFB7446GPBF

更新时间： 2024-11-24 20:00:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	541K
描述
Power Field-Effect Transistor

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中文翻译

获取价格

技术参数
数据手册
替代型号

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IRFB7446GPBF 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	7.89	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

IRFB7446GPBF 数据手册

StrongIRFET™

IRFB7446GPbF

HEXFET^®Power MOSFET

Application

 Brushed Motor drive applications

 BLDC Motor drive applications

Battery powered circuits

 Half-bridge and full-bridge topologies

 Synchronous rectifier applications

 Resonant mode power supplies

 OR-ing and redundant power switches

 DC/DC and AC/DC converters

 DC/AC Inverters

V_DSS

R_DS(on)typ.

max

40V

2.6m

3.3m

I_{D (Silicon Limited)}

I_{D (Package Limited)}

123A

120A

Benefits

 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

 Fully Characterized Capacitance and Avalanche SOA

 Enhanced body diode dV/dt and dI/dt Capability

 Lead-Free

TO-220AB

IRFB7446GPbF

 Halogen-Free

Gate

Drain

Source

Base part number

Package Type

Standard Pack

Form

Orderable Part Number

Quantity

IRFB7446GPbF

TO-220

Tube

IRFB7446GPbF

125

100

= 70A

= 125°C

= 25°C

10 12 14 16 18 20

100

125

150

175

Gate -to -Source Voltage (V)

, Case Temperature (°C)

GS,

Fig 2. Maximum Drain Current vs. Case Temperature

Fig 1. Typical On-Resistance vs. Gate Voltage

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November 19, 2014

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中文翻译

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IRFB7446GPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFB7446PBF	INFINEON	类似代替	HEXFETPower MOSFET

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