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IRFB7546 PDF预览

IRFB7546

更新时间: 2024-11-21 11:13:23
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 542K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. End-applications include cordless power and gardening tools, light electric vehicles and e-bikes demanding a high level of ruggedness and energy efficiency.

IRFB7546 数据手册

 浏览型号IRFB7546的Datasheet PDF文件第2页浏览型号IRFB7546的Datasheet PDF文件第3页浏览型号IRFB7546的Datasheet PDF文件第4页浏览型号IRFB7546的Datasheet PDF文件第5页浏览型号IRFB7546的Datasheet PDF文件第6页浏览型号IRFB7546的Datasheet PDF文件第7页 
StrongIRFET™  
IRFB7546PbF  
HEXFET® Power MOSFET  
Application  
Brushed Motor drive applications  
BLDC Motor drive applications  
Battery powered circuits  
Half-bridge and full-bridge topologies  
Synchronous rectifier applications  
Resonant mode power supplies  
OR-ing and redundant power switches  
DC/DC and AC/DC converters  
DC/AC Inverters  
VDSS  
60V  
RDS(on) typ.  
max  
6.0m  
7.3m  
ID  
75A  
Benefits  
S
D
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  
Fully Characterized Capacitance and Avalanche SOA  
Enhanced body diode dV/dt and dI/dt Capability  
Lead-Free, RoHS Compliant  
G
G
D
S
Gate  
Drain  
Source  
Base part number  
Package Type  
Standard Pack  
Form  
Orderable Part Number  
Quantity  
IRFB7546PbF  
TO-220  
Tube  
50  
IRFB7546PbF  
24  
20  
16  
12  
8
80  
60  
40  
20  
0
I
= 45A  
D
T
= 125°C  
J
4
T
= 25°C  
J
0
2
4
6
8
10 12 14 16 18 20  
25  
50  
75  
100  
125  
150  
175  
T
, Case Temperature (°C)  
V
Gate -to -Source Voltage (V)  
C
GS,  
Fig 2. Maximum Drain Current vs. Case Temperature  
Fig 1. Typical On-Resistance vs. Gate Voltage  
1
www.irf.com © 2014 International Rectifier  
Submit Datasheet Feedback  
November 7, 2014  

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