Datasheet > IRFB7530

IRFB7530

更新时间： 2024-11-25 11:15:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	661K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

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IRFB7530 数据手册

StrongIRFET™

IRFB7530PbF

IRFS7530PbF

IRFSL7530PbF

HEXFET^®Power MOSFET

Application

 Brushed Motor drive applications

 BLDC Motor drive applications

Battery powered circuits

 Half-bridge and full-bridge topologies

 Synchronous rectifier applications

 Resonant mode power supplies

 OR-ing and redundant power switches

 DC/DC and AC/DC converters

 DC/AC Inverters

V_DSS

60V

R_DS(on)typ.

max

1.65m

2.00m

295A

I_{D (Silicon Limited)}

I_{D (Package Limited)}

195A

Benefits

 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

 Fully Characterized Capacitance and Avalanche SOA

 Enhanced body diode dV/dt and dI/dt Capability

 Lead-Free, RoHS Compliant

D²Pak

TO-220AB

TO-262

IRFB7530PbF

IRFSL7530PbF

IRFS7530PbF

Gate

Drain

Source

Base part number

Package Type

Standard Pack

Form

Orderable Part Number

Quantity

IRFB7530PbF

IRFSL7530PbF

TO-220

TO-262

Tube

IRFB7530PbF

IRFSL7530PbF

IRFS7530PbF

Tube

IRFS7530PbF

D²-Pak

Tape and Reel Left

800

IRFS7530TRLPbF

300

250

200

150

100

= 100A

Limited by package

= 125°C

= 25°C

10 12 14 16 18 20

100

125

150

175

, Case Temperature (°C)

Gate -to -Source Voltage (V)

GS,

Fig 2. Maximum Drain Current vs. Case Temperature

Fig 1. Typical On-Resistance vs. Gate Voltage

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IRFB7540	INFINEON	获取价格	The StrongIRFET? power MOSFET family is optimized for low RDS(on)?and high current capabil
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