IRFB11N50A

更新时间： 2024-09-14 22:24:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	102K
描述
Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=11A)

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中文翻译

获取价格

数据手册

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IRFB11N50A 数据手册

PD- 91809B

SMPS MOSFET

IRFB11N50A

HEXFET^®Power MOSFET

Applications

V_DSS

500V

Rds(on) max

I_D

11A

l Switch Mode Power Supply ( SMPS )

l Uninterruptable Power Supply

l High speed power switching

0.52Ω

Benefits

l Low Gate Charge Qg results in Simple

Drive Requirement

l Improved Gate, Avalanche and dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche Voltage and Current

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

7.0

P_D@T_C= 25°C

Power Dissipation

170

W/°C

Linear Derating Factor

1.3

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

6.9

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Applicable Off Line SMPS Topologies:

l Two Transistor Forward

l Half & Full Bridge

l Power Factor Correction Boost

Notes through ꢀ are on page 8

www.irf.com

3/30/99

12 3 4 5 6 7 8

中文翻译

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