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IRFB17N50L PDF预览

IRFB17N50L

更新时间: 2024-11-25 05:39:27
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 146K
描述
Power MOSFET

IRFB17N50L 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-220AB
包装说明:TO-220AB, 3 PIN针数:3
Reach Compliance Code:unknown风险等级:5.16
Is Samacsys:N其他特性:AVALANCHE RATED
雪崩能效等级(Eas):390 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):16 A最大漏极电流 (ID):16 A
最大漏源导通电阻:0.32 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):220 W最大脉冲漏极电流 (IDM):64 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFB17N50L 数据手册

 浏览型号IRFB17N50L的Datasheet PDF文件第2页浏览型号IRFB17N50L的Datasheet PDF文件第3页浏览型号IRFB17N50L的Datasheet PDF文件第4页浏览型号IRFB17N50L的Datasheet PDF文件第5页浏览型号IRFB17N50L的Datasheet PDF文件第6页浏览型号IRFB17N50L的Datasheet PDF文件第7页 
IRFB17N50L, SiHFB17N50L  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Low Gate Charge Qg results in Simple Drive  
Requirement  
PRODUCT SUMMARY  
VDS (V)  
500  
Available  
R
DS(on) (Ω)  
VGS = 10 V  
0.28  
RoHS*  
• Improved Gate, Avalanche and Dynamic dV/dt  
Ruggedness  
Qg (Max.) (nC)  
130  
33  
COMPLIANT  
Q
Q
gs (nC)  
gd (nC)  
• Fully  
Characterized  
Capacitance  
and  
59  
Avalanche Voltage and Current  
• Low Trr and Soft Diode Recovery  
• Lead (Pb)-free Available  
Configuration  
Single  
D
TO-220  
APPLICATIONS  
• Switch Mode Power Supply (SMPS)  
• Uninterruptible Power Supply  
• High Speed Power Switching  
• ZVS and High Frequency Circuit  
• PWM Inverters  
G
S
D
S
N-Channel MOSFET  
G
ORDERING INFORMATION  
Package  
TO-220  
IRFB17N50LPbF  
SiHFB17N50L-E3  
IRFB17N50L  
Lead (Pb)-free  
SnPb  
SiHFB17N50L  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
500  
V
VGS  
30  
T
C = 25 °C  
16  
Continuous Drain Current  
VGS at 10 V  
ID  
TC =100°C  
11  
A
Pulsed Drain Currenta  
IDM  
64  
Linear Derating Factor  
1.8  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
390  
16  
EAR  
22  
mJ  
W
Maximum Power Dissipation  
TC = 25 °C  
PD  
220  
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
13  
- 55 to + 150  
300d  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
°C  
for 10 s  
10  
lbf · in  
N · m  
Mounting Torque  
6-32 or M3 screw  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. Starting TJ = 25 °C, L = 3.0 mH, RG = 25 Ω, IAS = 16 A (see fig. 12).  
c. ISD 16 A, dI/dt 347 A/µs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91098  
S-81263-Rev. A, 21-Jul-08  
www.vishay.com  
1

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