5秒后页面跳转
IRFB17N60KPBF PDF预览

IRFB17N60KPBF

更新时间: 2024-11-06 12:05:11
品牌 Logo 应用领域
科盛美 - KERSEMI 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
7页 3561K
描述
Power MOSFET

IRFB17N60KPBF 数据手册

 浏览型号IRFB17N60KPBF的Datasheet PDF文件第2页浏览型号IRFB17N60KPBF的Datasheet PDF文件第3页浏览型号IRFB17N60KPBF的Datasheet PDF文件第4页浏览型号IRFB17N60KPBF的Datasheet PDF文件第5页浏览型号IRFB17N60KPBF的Datasheet PDF文件第6页浏览型号IRFB17N60KPBF的Datasheet PDF文件第7页 
IRFB17N60K, SiHFB17N60K  
Power MOSFET  
FEATURES  
• Smaller TO-220 Package  
PRODUCT SUMMARY  
VDS (V)  
600  
Available  
• Low Gate Charge Qg Results in Simple Drive  
Requirement  
RDS(on) (Ω)  
VGS = 10 V  
0.35  
RoHS*  
Qg (Max.) (nC)  
99  
32  
COMPLIANT  
• Improved Gate, Avalanche and Dynamic dV/dt  
Ruggedness  
Q
Q
gs (nC)  
gd (nC)  
47  
• Fully Characterized Capacitance and Avalanche Voltage  
and Current  
Configuration  
Single  
D
• Lead (Pb)-free Available  
TO-220  
APPLICATIONS  
• Switch Mode Power Supply (SMPS)  
• Uninterruptible Power Supply  
• High Speed Power Switching  
• Hard Switched and High Frequency Circuits  
G
S
D
G
S
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
TO-220  
IRFB17N60KPbF  
SiHFB17N60K-E3  
IRFB17N60K  
Lead (Pb)-free  
SnPb  
SiHFB17N60K  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
600  
30  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
T
C = 25 °C  
17  
Continuous Drain Current  
VGS at 10 V  
ID  
TC =100°C  
11  
A
Pulsed Drain Currenta  
IDM  
68  
Linear Derating Factor  
2.7  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
Maximum Power Dissipation  
EAS  
IAR  
330  
17  
EAR  
34  
340  
mJ  
W
T
C = 25 °C  
PD  
Peak Diode Recovery dV/dtc  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
Mounting Torque  
dV/dt  
TJ, Tstg  
11  
V/ns  
- 55 to + 150  
300d  
°C  
N
for 10 s  
6-32 or M3 screw  
10  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. Starting TJ = 25 °C, L = 2.3 mH, RG = 25 Ω, IAS = 17 A (see fig. 12).  
c. ISD 17 A, dI/dt 380 A/µs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
1
www.kersemi.com  

与IRFB17N60KPBF相关器件

型号 品牌 获取价格 描述 数据表
IRFB18N50K VISHAY

获取价格

Power MOSFET
IRFB18N50K KERSEMI

获取价格

Power MOSFET
IRFB18N50K INFINEON

获取价格

Power MOSFET(Vdss=500V, Rds(on)max=0.26ohm, Id=27A)
IRFB18N50KPBF VISHAY

获取价格

Power MOSFET
IRFB18N50KPBF INFINEON

获取价格

SMPS MOSFET
IRFB20N50K VISHAY

获取价格

Power MOSFET
IRFB20N50K KERSEMI

获取价格

Power MOSFET
IRFB20N50K INFINEON

获取价格

SMPS MOSFET
IRFB20N50K, SiHFB20N50K VISHAY

获取价格

Power MOSFET
IRFB20N50KPBF KERSEMI

获取价格

Power MOSFET