IRFB17N60K, SiHFB17N60K
Power MOSFET
FEATURES
• Smaller TO-220 Package
PRODUCT SUMMARY
VDS (V)
600
Available
• Low Gate Charge Qg Results in Simple Drive
Requirement
RDS(on) (Ω)
VGS = 10 V
0.35
RoHS*
Qg (Max.) (nC)
99
32
COMPLIANT
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Q
Q
gs (nC)
gd (nC)
47
• Fully Characterized Capacitance and Avalanche Voltage
and Current
Configuration
Single
D
• Lead (Pb)-free Available
TO-220
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching
• Hard Switched and High Frequency Circuits
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220
IRFB17N60KPbF
SiHFB17N60K-E3
IRFB17N60K
Lead (Pb)-free
SnPb
SiHFB17N60K
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
600
30
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
T
C = 25 °C
17
Continuous Drain Current
VGS at 10 V
ID
TC =100°C
11
A
Pulsed Drain Currenta
IDM
68
Linear Derating Factor
2.7
W/°C
mJ
A
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
EAS
IAR
330
17
EAR
34
340
mJ
W
T
C = 25 °C
PD
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
dV/dt
TJ, Tstg
11
V/ns
- 55 to + 150
300d
°C
N
for 10 s
6-32 or M3 screw
10
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 2.3 mH, RG = 25 Ω, IAS = 17 A (see fig. 12).
c. ISD ≤ 17 A, dI/dt ≤ 380 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
1
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