Datasheet > IRFB20N50KPBF

IRFB20N50KPBF

更新时间： 2024-09-16 04:23:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	181K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册

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IRFB20N50KPBF 数据手册

PD - 94984

IRFB20N50KPbF

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

V_DSS

500V

R_DS(on)typ.

I_D

20A

l Switch Mode Power Supply (SMPS)

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency

Circuits

0.21Ω

l Lead-Free

Benefits

l Low Gate Charge Qg results in Simple Drive Requirement

l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness

l Fully Characterized Capacitance and Avalanche Voltage

and Current

TO-220AB

l Low R_DS(on)

Absolute Maximum Ratings

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

P_D@T_C= 25°C

Power Dissipation

280

W/°C

Linear Derating Factor

2.2

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

6.9

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case )

300

°C

Mounting Torque, 6-32 or M3 screw

Avalanche Characteristics

Symbol

E_AS

Parameter

Single Pulse Avalanche Energy

Typ.

Max.

330

Units

–––

I_AR

Avalanche Current

E_AR

Repetitive Avalanche Energy

Thermal Resistance

Symbol

Parameter

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Typ.

–––

0.50

–––

Max.

0.45

–––

Units

R_θJC

R_θCS

R_θJA

°C/W

www.irf.com

2/5/04

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