IRFB17N50L

更新时间： 2024-11-05 22:23:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	85K
描述
Power MOSFET(Vdss=500V, Rds(on)typ.=0.28ohm, Id=16A)

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中文翻译

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数据手册

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IRFB17N50L 数据手册

PD - 94084A

IRFB17N50L

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

^lSwitch Mode Power Supply (SMPS)

l Uninterruptible Power Supply

l High Speed Power Switching

l ZVS and High Frequency Circuit

l PWM Inverters

V_DSS

500V

R_DS(on)typ.

I_D

16A

0.28Ω

Benefits

l Low Gate Charge Qg results in Simple Drive Requirement

l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

l Fully Characterized Capacitance and Avalanche Voltage

and Current

l Low Trr and Soft Diode Recovery

TO-220AB

l High Performance Optimised Anti-parallel Diode

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

220

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

1.8

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case )

300

°C

Mounting Torque, 6-32 or M3 screw

lbft.in(N.m)

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Conditions

MOSFET symbol

I_S

Continuous Source Current

(Body Diode)

––– –––

showing the

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

––– ––– 1.5

––– 170 250

––– 220 330

––– 470 710

––– 810 1210

T_J= 25°C, I_S= 16A, V_GS= 0V

T_J= 25°C

T_J= 125°C

T_J= 25°C

T_J= 125°C

I_F= 16A

Reverse Recovery Time

Reverse Recovery Charge

di/dt = 100A/µs

Q_rr

I_RRM

t_on

Reverse Recovery Current

Forward Turn-On Time

––– 7.3

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

Typical SMPS Topologies

Bridge Converters

l All Zero Voltage Switching

www.irf.com

3/28/01

12 3 4 5 6 7 8

中文翻译

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