Datasheet > 晶体管 > 功率场效应晶体管> IRFB16N60LPBF

IRFB16N60LPBF

更新时间： 2024-11-25 04:23:19

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体开关晶体管功率场效应晶体管脉冲局域网
页数	文件大小	规格书
9页	196K
描述
SMPS MOSFET

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中文翻译

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数据手册

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IRFB16N60LPBF 数据手册

PD - 95471

SMPS MOSFET

IRFB16N60LPbF

HEXFET^®Power MOSFET

Applications

• Zero Voltage Switching SMPS

• Telecom and Server Power Supplies

• Uninterruptible Power Supplies

• Motor Control applications

• Lead-Free

Trr typ.

V_DSSR_DS(on)typ.

385m

I_D

600V

Ω

130ns 16A

Features and Benefits

• SuperFast body diode eliminates the need for external

diodes in ZVS applications.

• Lower Gate charge results in simpler drive requirements.

• Enhanced dv/dt capabilities offer improved ruggedness.

TO-220AB

• Higher Gate voltage threshold offers improved noise immunity.

Absolute Maximum Ratings

Parameter

Max.

Units

Continuous Drain Current, V_GS@ 10V

@ T = 25°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T = 100°C

@T = 25°C

Power Dissipation

310

Linear Derating Factor

Gate-to-Source Voltage

2.5

±30

W/°C

Peak Diode Recovery dv/dt

Operating Junction and

dv/dt

V/ns

-55 to + 150

Storage Temperature Range

°C

STG

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

300 (1.6mm from case )

1.1(10)

N•m (lbf•in)

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

––– –––

MOSFET symbol

(Body Diode)

Pulsed Source Current

showing the

integral reverse

(Body Diode)

p-n junction diode.

T = 25°C, I = 16A, V = 0V

J S GS

Diode Forward Voltage

Reverse Recovery Time

1.5

T = 25°C, I = 16A

––– 130 200

––– 240 360

T_J= 125°C, di/dt = 100A/µs

T = 25°C, I = 16A, V = 0V

Reverse Recovery Charge

––– 450 670 nC

––– 1080 1620

T_J= 125°C, di/dt = 100A/µs

I_RRM

T = 25°C

Reverse Recovery Current

Forward Turn-On Time

––– 5.8

8.7

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

www.irf.com

7/7/04

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