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IRFB17N20D PDF预览

IRFB17N20D

更新时间: 2024-11-05 22:24:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 197K
描述
Power MOSFET(Vdss=200V, Rds(on)max=0.17ohm, Id=16A)

IRFB17N20D 数据手册

 浏览型号IRFB17N20D的Datasheet PDF文件第2页浏览型号IRFB17N20D的Datasheet PDF文件第3页浏览型号IRFB17N20D的Datasheet PDF文件第4页浏览型号IRFB17N20D的Datasheet PDF文件第5页浏览型号IRFB17N20D的Datasheet PDF文件第6页浏览型号IRFB17N20D的Datasheet PDF文件第7页 
PD- 93902A  
IRFB17N20D  
IRFS17N20D  
SMPS MOSFET  
IRFSL17N20D  
HEXFET® Power MOSFET  
Applications  
l High frequency DC-DC converters  
VDSS  
200V  
RDS(on) max  
ID  
16A  
0.17Ω  
Benefits  
l Low Gate-to-Drain Charge to Reduce  
Switching Losses  
l Fully Characterized Capacitance Including  
Effective COSS to Simplify Design, (See  
App. Note AN1001)  
l Fully Characterized Avalanche Voltage  
and Current  
D2Pak  
TO-262  
TO-220AB  
IRFB17N20D  
IRFS17N20D  
IRFSL17N20D  
Absolute Maximum Ratings  
Parameter  
Max.  
16  
Units  
A
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
12  
64  
PD @TA = 25°C  
PD @TC = 25°C  
Power Dissipation ‡  
3.8  
W
Power Dissipation  
140  
Linear Derating Factor  
0.90  
W/°C  
V
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
± 30  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
2.7  
V/ns  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torqe, 6-32 or M3 screw†  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Typical SMPS Topologies  
l Telecom 48V input Forward Converter  
Notes  through are on page 11  
www.irf.com  
1
4/26/00  

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