IRF7303

更新时间： 2024-09-12 22:31:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	113K
描述
Power MOSFET(Vdss=30V, Rds(on)=0.050ohm)

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中文翻译

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数据手册
替代型号

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IRF7303 数据手册

PD - 9.1239D

IRF7303

HEXFET^®Power MOSFET

l Generation V Technology

l Ultra Low On-Resistance

l Dual N-Channel Mosfet

l Surface Mount

V_DSS= 30V

G 1

D 1

l Available in Tape & Reel

l Dynamic dv/dt Rating

l Fast Switching

D 2

G 2

R_DS(on)= 0.050Ω

Top View

Description

Fifth GenerationHEXFETsfromInternationalRectifier

utilize advanced processing techniques to achieve

the lowest possible on-resistance per silicon area.

This benefit, combined with the fast switching speed

and ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient device for use in a wide

variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements,

multiple devices can be used in an application with

dramatically reduced board space. The package is

designed for vapor phase, infra red, or wave soldering

techniques. Power dissipation of greater than 0.8W

is possible in a typical PCB mount application.

SO-8

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

10 Sec. Pulsed Drain Current, V_GS@ 10V

5.3

4.9

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

3.9

P_D@T_A= 25°C

Power Dissipation

2.0

W/°C

Linear Derating Factor

0.016

± 20

5.0

V_GS

Gate-to-Source Voltage

dv/dt

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

V/ns

°C

T_J,T_STG

-55 to + 150

Thermal Resistance Ratings

Parameter

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambient

–––

62.5

°C/W

8/25/97

12 3 4 5 6 7...9

中文翻译

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IRF7303 替代型号

型号	品牌	替代类型	描述	数据表
BSO203SPHXUMA1	INFINEON	功能相似	Power Field-Effect Transistor, 5.7A I(D), 20V, 0.021ohm, 1-Element, P-Channel, Silicon, Me
BSO211PHXUMA1	INFINEON	功能相似	Power Field-Effect Transistor, 3.2A I(D), 20V, 0.067ohm, 2-Element, P-Channel, Silicon, Me

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