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IRF7171MPBF

更新时间： 2024-09-17 01:18:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 751K
描述
Optimized for Synchronous Rectification

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IRF7171MPBF 数据手册

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FastIRFET™  
IRF7171MTRPbF  
DirectFET® Power MOSFET  
Typical values (unless otherwise specified)  
Applications and Benefits  
Ideal for High Performance Isolated Converter  
Primary Switch  
Optimized for Synchronous Rectification  
RoHS Compliant, Halogen Free   
Lead-Free (Qualified up to 260°C Reflow)   
Low Conduction Losses  
VDSS  
100V min  
VGS  
±20V max  
Qgd  
RDS(on)  
5.3m@ 10V  
Vgs(th)  
Qg tot  
36nC  
13nC  
2.9V  
High Cdv/dt Immunity  
Low Profile (<0.7mm)  
S
D
S
Dual Sided Cooling Compatible   
Compatible with existing Surface Mount Techniques   
Industrial Qualified  
G
D
Applicable DirectFET® Outline and Substrate Outline   
MN  
MN  
Description  
The IRF7171MTRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging  
to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The  
DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor  
phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing meth-  
ods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems.  
The IRF7171MTRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses  
in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for  
system reliability improvements, and makes this device ideal for high performance power converters.  
Ordering Information  
Base part number  
Package Type  
Standard Pack  
Orderable Part Number  
Form  
Tape and Reel  
Quantity  
4800  
IRF7171MTRPbF  
DirectFET® Medium Can  
IRF7171MTRPbF  
Absolute Maximum Ratings  
Parameter  
Max.  
±20  
93  
Units  
V
VGS  
Gate-to-Source Voltage  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
ID @ TC = 25°C  
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)  
59  
15  
330  
86  
A
ID @ TA = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Pulsed Drain Current  
IDM  
EAS  
IAR  
Single Pulse Avalanche Energy   
Avalanche Current   
mJ  
A
56  
18.0  
15.0  
12.0  
9.0  
40  
I
= 56A  
D
V
= 6V  
GS  
VGS = 7V  
VGS = 8V  
VGS = 10V  
VGS = 12V  
30  
20  
10  
0
T
= 125°C  
J
T
= 25°C  
J
6.0  
3.0  
0
25  
50  
75  
100 125 150 175 200  
4
6
8
10  
12  
14  
16  
18  
20  
I
, Drain Current (A)  
V
Gate -to -Source Voltage (V)  
D
GS,  
Fig 2. Typical On-Resistance vs. Drain Current  
Fig 1. Typical On-Resistance vs. Gate Voltage  
Notes  
TC measured with thermocouple mounted to top (Drain) of part.  
Repetitive rating; pulse width limited by max. junction temperature.  
Click on this section to link to the appropriate technical paper.  
Click on this section to link to the DirectFET® Website.  
Surface mounted on 1 in. square Cu board, steady state.  
Starting TJ = 25°C, L = 55µH, RG = 50, IAS = 56A.  
1
www.irf.com  
© 2015 International Rectifier  
Submit Datasheet Feedback  
March 25, 2015  
1234567...11

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