IRF7205

更新时间： 2024-01-17 03:36:41

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关光电二极管
页数	文件大小	规格书
9页	168K
描述
HEXFET Power MOSFET

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IRF7205 数据手册

PD - 9.1104B

IRF7205

HEXFET^®Power MOSFET

l Adavanced Process Technology

l Ultra Low On-Resistance

l P-Channel MOSFET

l Surface Mount

l Available in Tape & Reel

l Dynamic dv/dt Rating

l Fast Switching

V_DSS= -30V

R_DS(on)= 0.070Ω

I_D= -4.6A

Top View

Description

Fourth Generation HEXFETs from International

Rectifier utilize advanced processing techniques to

achieve the lowest possible on-resistance per silicon

area. This benefit, combined with the fast switching

speed and ruggedized device design that HEXFET

Power MOSFETs are well known for, provides the

designer with an extremely efficient device for use in

a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

dual-die capability making it ideal in a variety of power

applications. With these improvements, multiple

devicescanbeusedinanapplicationwithdramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

Power dissipation of greater than 0.8W is possible in

a typical PCB mount application.

SO-8

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

-4.6

-3.7

-15

P_D@T_C= 25°C

Power Dissipation

2.5

W/°C

Linear Derating Factor

0.020

± 20

V_GS

Gate-to-Source Voltage

dv/dt

Peak Diode Recovery dv/dt

-3.0

V/nS

T_J,T_STG

Junction and Storage Temperature Range

-55 to + 150

°C

Thermal Resistance Ratings

Parameter

Min.

Typ.

Max.

Units

R_θJA

Maximum Junction-to-Ambient

–––

°C/W

8/25/97

12 3 4 5 6 7...9

中文翻译

下载PDF

IRF7205 替代型号

型号	品牌	替代类型	描述	数据表
IRF7205TRPBF	INFINEON	类似代替	Adavanced Process Technology
IRF7205PBF	INFINEON	类似代替	HEXFET Power MOSFET
BSO203SPHXUMA1	INFINEON	功能相似	Power Field-Effect Transistor, 5.7A I(D), 20V, 0.021ohm, 1-Element, P-Channel, Silicon, Me

与IRF7205相关器件

型号	品牌	获取价格	描述	数据表
IRF7205 (KRF7205)	KEXIN	获取价格	P-Channel MOSFET
IRF7205PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRF7205PBF-1	INFINEON	获取价格	Power Field-Effect Transistor,
IRF7205TR	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C
IRF7205TRPBF	INFINEON	获取价格	Adavanced Process Technology
IRF7205TRPBF-1	INFINEON	获取价格	Power Field-Effect Transistor
IRF7207	INFINEON	获取价格	HEXFET Power MOSFET
IRF7207PBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRF7207TR	INFINEON	获取价格	Power Field-Effect Transistor, 5.4A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Met
IRF7207TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 5.4A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Met