生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.6 |
外壳连接: | DRAIN | 配置: | SINGLE |
最小漏源击穿电压: | 400 V | 最大漏极电流 (ID): | 3 A |
最大漏源导通电阻: | 1.8 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 40 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF720AJ | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal | |
IRF720AJ69Z | FAIRCHILD |
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Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Met | |
IRF720B | FAIRCHILD |
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400V N-Channel MOSFET | |
IRF720BJ69Z | FAIRCHILD |
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Power Field-Effect Transistor, 3.3A I(D), 400V, 1.75ohm, 1-Element, N-Channel, Silicon, Me | |
IRF720C | MOTOROLA |
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Power Field-Effect Transistor, 3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal | |
IRF720CF | NJSEMI |
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Trans MOSFET P-CH 20V 5.3A 8-Pin SOIC | |
IRF720CHIP | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.3A I(D) | CHIP | |
IRF720CHP | VISHAY |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
IRF720D1 | MOTOROLA |
获取价格 |
3A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
IRF720FI | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3A I(D) | TO-220VAR |