Datasheet > IRF7205TR

IRF7205TR

更新时间： 2024-11-21 17:15:51

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	659K
描述
种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-4.6A;Vgs(th)(V):±20;漏源导通电阻:70mΩ@-10V

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IRF7205TR 数据手册

IRF7205

-30V P-Channel MOSFET

UMW

Description

The SOP-8 package is designed forvapor phase , infra red , or

wave soldering techniquesPower dissipation of greater than 0 .

8W is possible ina typical PCB mount application

Features

•

VDS (V) = -30V

(V_GS= -10V)

•

ID = -4.6A

RDS(ON) ＜

70m

Ω(V

=-10V)

130m

Ω(V

•

=-4.5V)

Adavanced Process Technology

Ultra Low On-resistance

Surface Mount

Fast Switching

Lead-free

•

Absolute Maximum Ratings

Parameter

Maxꢀ

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V

-4&6

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

-3&7

-15

P_D@T_C= 25°C

Power Dissipation

2&5

W/°C

Linear Derating Factor

0&020

± 20

V_GS

Gate-to-Source Voltage

dv/dt

T_J,T_STG

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

-3&0

V/nS

-55 to + 150

°C

Thermal Resistance Ratings

Parameter

Minꢀ

Typꢀ

Maxꢀ

Units

R_θJA

Maximum Junction-to-Ambient

°C/W

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7

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