IRF7207PBF

更新时间： 2024-01-02 06:12:25

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数	文件大小	规格书
7页	150K
描述
HEXFET㈢ Power MOSFET

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中文翻译

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数据手册

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IRF7207PBF 数据手册

PD - 95166

IRF7207PbF

HEXFET^®Power MOSFET

l Generation 5 Technology

l P-Channel Mosfet

l Surface Mount

l Available in Tape & Reel

l Dynamic dv/dt Rating

V_DSS= -20V

l Fast Switching

l Lead-Free

R_DS(on)= 0.06Ω

Top View

Description

Fifth Generation HEXFET^®Power MOSFETs from

International Rectifier utilize advanced processing

techniques to achieve extremely low on-resistance

per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that

HEXFETpowerMOSFETsarewellknownfor,provides

the designer with an extremely efficient and reliable

device for use in a wide variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

powerapplications. Withtheseimprovements,multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

Power dissipation of greater than 0.8W is possible in a

typical PCB mount application.

SO-8

Absolute Maximum Ratings

Parameter

Max.

Units

V_DS

Drain- Source Voltage

-20

I_D@ T_C= 25°C

I_D@ T_C= 70°C

I_DM

Continuous Drain Current, V_GS@ -4.5V

Pulsed Drain Current

Power Dissipation

-5.4

-4.3

-43

P_D@T_C= 25°C

P_D@T_C= 70°C

2.5

Power Dissipation

1.6

Linear Derating Factor

0.02

W/°C

V_GS

Gate-to-Source Voltage

± 12

-16

V_GSM

E_AS

Gate-to-Source Voltage Single Pulse tp<10µs

Single Pulse Avalanche Energy

140

dv/dt

T_J,T_STG

Peak Diode Recovery dv/dt

-5.0

V/ns

°C

Junction and Storage Temperature Range

-55 to + 150

Thermal Resistance

Parameter

Maximum Junction-to-Ambientꢀ

Typ.

–––

Max.

Units

°C/W

R_θJA

www.irf.com

10/6/04

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中文翻译

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