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IRF7207PBF

更新时间： 2024-11-18 04:44:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
7页 150K
描述
HEXFET㈢ Power MOSFET

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中文翻译

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IRF7207PBF 数据手册

 浏览型号IRF7207PBF的Datasheet PDF文件第2页浏览型号IRF7207PBF的Datasheet PDF文件第3页浏览型号IRF7207PBF的Datasheet PDF文件第4页浏览型号IRF7207PBF的Datasheet PDF文件第5页浏览型号IRF7207PBF的Datasheet PDF文件第6页浏览型号IRF7207PBF的Datasheet PDF文件第7页 
PD - 95166  
IRF7207PbF  
HEXFET® Power MOSFET  
l Generation 5 Technology  
l P-Channel Mosfet  
l Surface Mount  
l Available in Tape & Reel  
l Dynamic dv/dt Rating  
A
1
2
3
4
8
D
S
S
VDSS = -20V  
7
D
6
S
G
D
5
D
l Fast Switching  
l Lead-Free  
RDS(on) = 0.06Ω  
Top View  
Description  
Fifth Generation HEXFET® Power MOSFETs from  
International Rectifier utilize advanced processing  
techniques to achieve extremely low on-resistance  
per silicon area. This benefit, combined with the fast  
switching speed and ruggedized device design that  
HEXFETpowerMOSFETsarewellknownfor,provides  
the designer with an extremely efficient and reliable  
device for use in a wide variety of applications.  
The SO-8 has been modified through a customized  
leadframe for enhanced thermal characteristics and  
multiple-die capability making it ideal in a variety of  
powerapplications. Withtheseimprovements,multiple  
devices can be used in an application with dramatically  
reduced board space. The package is designed for  
vapor phase, infra red, or wave soldering techniques.  
Power dissipation of greater than 0.8W is possible in a  
typical PCB mount application.  
SO-8  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VDS  
Drain- Source Voltage  
-20  
V
ID @ TC = 25°C  
ID @ TC = 70°C  
IDM  
Continuous Drain Current, VGS @ -4.5V  
Continuous Drain Current, VGS @ -4.5V  
Pulsed Drain Current   
Power Dissipation  
-5.4  
-4.3  
A
-43  
PD @TC = 25°C  
PD @TC = 70°C  
2.5  
W
Power Dissipation  
1.6  
Linear Derating Factor  
0.02  
W/°C  
VGS  
Gate-to-Source Voltage  
± 12  
-16  
V
V
VGSM  
EAS  
Gate-to-Source Voltage Single Pulse tp<10µs  
Single Pulse Avalanche Energy‚  
140  
dv/dt  
TJ, TSTG  
Peak Diode Recovery dv/dt ƒ  
-5.0  
V/ns  
°C  
Junction and Storage Temperature Range  
-55 to + 150  
Thermal Resistance  
Parameter  
Maximum Junction-to-Ambientꢀ  
Typ.  
–––  
Max.  
50  
Units  
°C/W  
RθJA  
www.irf.com  
1
10/6/04  
1234567

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IRF720A16A MOTOROLA

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IRF720AF MOTOROLA

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 		3A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
IRF720AJ MOTOROLA

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 		Power Field-Effect Transistor, 3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal
IRF720AJ69Z FAIRCHILD

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IRF720B FAIRCHILD

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 		400V N-Channel MOSFET
IRF720BJ69Z FAIRCHILD

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 		Power Field-Effect Transistor, 3.3A I(D), 400V, 1.75ohm, 1-Element, N-Channel, Silicon, Me

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