Datasheet > IRF720

IRF720

更新时间： 2024-02-01 16:38:09

品牌	Logo	应用领域
英特矽尔 - INTERSIL		/
页数	文件大小	规格书
7页	58K
描述
3.3A, 400V, 1.800 Ohm, N-Channel Power MOSFET

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IRF720 数据手册

IRF720

Data Sheet

July 1999

File Number 1579.4

3.3A, 400V, 1.800 Ohm, N-Channel Power

MOSFET

Features

• 3.3A, 400V

This N-Channel enhancement mode silicon gate power ﬁeld

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a speciﬁed level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching convertors, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

• r

= 1.800Ω

DS(ON)

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Formerly developmental type TA17404.

Ordering Information

Symbol

PART NUMBER

PACKAGE

BRAND

IRF720

TO-220AB

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

4-1

12 3 4 5 6 7

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IRF720 替代型号

型号	品牌	替代类型	描述	数据表
IRF720PBF	VISHAY	功能相似	Power MOSFET
STP5NB40	STMICROELECTRONICS	功能相似	N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

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