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IRF7204TR PDF预览

IRF7204TR

更新时间: 2024-11-18 17:15:43
品牌 Logo 应用领域
友台半导体 - UMW /
页数 文件大小 规格书
7页 1525K
描述
种类:P-Channel;漏源电压(Vdss):-30V;持续漏极电流(Id)(在25°C时):-5.1A;Vgs(th)(V):±20;漏源导通电阻:55mΩ@-10V

IRF7204TR 数据手册

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R
UMW  
IRF7204  
-30V P -Channel Enhancement Mode MOSFET  
A
1
2
3
4
8
General Description:  
The IRF7204TR is the single P-Channel logic  
D
S
S
7
D
enhancement mode power field effect transistors to  
provide excellent RDS(on), low gate charge and low  
gate resistance. It’s up to -30V operation voltage is well  
6
5
S
G
D
D
suited in switching mode power supply, SMPS,  
notebook computer power management and other  
battery powered circuits.  
Top View  
Applications:  
Switching power supply, SMPS  
Features:  
RDS(ON)<55m @VGS=10V  
Battery Powered System  
RDS(ON)<90m @VGS=4.5V  
DC/DC Converter  
DC/AC Converter  
Load Switch  
Super high density cell design for extremely low  
RDS(ON) Exceptional on-resistance and maximum DC current  
Absolute Maximum Ratings (TA=25unless otherwise noted)  
Parameter  
Symbol  
VDS  
Limit  
-30  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
±20  
V
VGS  
Drain Current-Continuous  
-5.1  
A
ID  
Drain Current-Pulsed (Note 1)  
-20  
A
IDM  
Maximum Power Dissipation  
2.5  
W
PD  
Operating Junction and Storage Temperature Range  
-55 To 150  
T
J
,TSTG  
Thermal Characteristic  
Thermal Resistance,Junction-to-Ambient (Note 2)  
RθJA  
50  
/W  
1
www.umw-ic.com  
UTD Semiconductor Co.,Limited  

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