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IRF7204PBF PDF预览

IRF7204PBF

更新时间: 2024-01-14 13:02:32
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
9页 244K
描述
HEXFET㈢ Power MOSFET

IRF7204PBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE, SO-8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:6.99
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):5.3 A
最大漏极电流 (ID):5.3 A最大漏源导通电阻:0.06 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MS-012AA
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):2.5 W
最大脉冲漏极电流 (IDM):21 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRF7204PBF 数据手册

 浏览型号IRF7204PBF的Datasheet PDF文件第2页浏览型号IRF7204PBF的Datasheet PDF文件第3页浏览型号IRF7204PBF的Datasheet PDF文件第4页浏览型号IRF7204PBF的Datasheet PDF文件第5页浏览型号IRF7204PBF的Datasheet PDF文件第6页浏览型号IRF7204PBF的Datasheet PDF文件第7页 
PD - 95165  
IRF7204PbF  
HEXFET® Power MOSFET  
l Adavanced Process Technology  
l Ultra Low On-Resistance  
l P-Channel MOSFET  
l Surface Mount  
l Available in Tape & Reel  
l Dynamic dv/dt Rating  
l Fast Switching  
A
D
1
2
3
4
8
S
S
VDSS = -20V  
7
D
6
S
G
D
RDS(on) = 0.060Ω  
5
D
l Lead-Free  
Description  
ID = -5.3A  
Top View  
Fourth Generation HEXFETs from International  
Rectifier utilize advanced processing techniques to  
achieve the lowest possible on-resistance per silicon  
area. This benefit, combined with the fast switching  
speed and ruggedized device design that HEXFET  
Power MOSFETs are well known for, provides the  
designer with an extremely efficient device for use in  
a wide variety of applications.  
The SO-8 has been modified through a customized  
leadframe for enhanced thermal characteristics and  
dual-die capability making it ideal in a variety of power  
applications. With these improvements, multiple  
devicescanbeusedinanapplicationwithdramatically  
reduced board space. The package is designed for  
vapor phase, infra red, or wave soldering techniques.  
Power dissipation of greater than 0.8W is possible in  
a typical PCB mount application.  
SO-8  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
-5.3  
-4.2  
-21  
A
PD @TC = 25°C  
Power Dissipation  
2.5  
W
W/°C  
±
Linear Derating Factor  
0.020  
VGS  
Gate-to-Source  
Voltage  
12V  
dv/dt  
TJ,TSTG  
Peak Diode Recovery dv/dt ‚  
-1.7  
V/nS  
Junction and Storage Temperature Range  
-55 to + 150  
°C  
Thermal Resistance Ratings  
Parameter  
Min.  
Typ.  
Max.  
Units  
RθJA  
Maximum Junction-to-Ambient „  
–––  
–––  
50  
°C/W  
10/6/04  

IRF7204PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF7204TRPBF INFINEON

完全替代

Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Met
IRF7204TR INFINEON

类似代替

Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Met
IRF7204 INFINEON

类似代替

Power MOSFET(Vdss=-20V, Rds(on)=0.060ohm, Id=-5.3A)

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Adavanced Process Technology